參數(shù)資料
型號(hào)： HYM71V16M635BLT8
英文描述： 16Mx64|3.3V|K/H|x8|SDR SDRAM - SO DIMM 128MB
中文描述： 16Mx64 | 3.3 |鉀/ ? | x8 | SDRAM的特別提款權(quán)-蘇128MB的內(nèi)存
文件頁數(shù)： 9/14頁
文件大?。?/td> 355K
代理商： HYM71V16M635BLT8
PC133 SDRAM Unbuffered DIMM
Rev. 0.1/Nov. 01
10
HYM71V32635BT8 Series
DC CHARACTERISTICS I
(TA=0 to 70
°
C
, V
DD
=3.3
±
0.3V)
Note :
1.V
IN
= 0 to 3.6V, All other pins are not tested under V
IN
=0V
2.D
OUT
is disabled, V
OUT
=0 to 3.6
DC CHARACTERISTICS II
Note :
1. I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2. Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HYM71V32635BT8-H
4. HYM71V32635BLT8-H
Parameter
Symbol
Min.
Max
Unit
Note
Input Leakage Current
I
LI
-16
16
uA
1
Output Leakage Current
I
LO
-1
1
uA
2
Output High Voltage
V
OH
2.4
-
V
I
OH
= -4mA
Output Low Voltage
V
OL
-
0.4
V
I
OL
= +4mA
Parameter
Symbol
Test Condition
Speed
Unit
Note
-K
-H
Operating Current
I
DD1
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
1400
1200
mA
1
Precharge Standby Current
in Power Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
= 15ns
32
mA
I
DD2PS
CKE
≤
V
IL
(max), t
CK
=
∞
32
Precharge Standby Current
in Non Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
30ns. All other pins
≥
V
DD
-0.2V or
≤
0.2V
320
mA
I
DD2NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
160
Active Standby Current
in Power Down Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
= 15ns
112
mA
I
DD3PS
CKE
≤
V
IL
(max), t
CK
=
∞
112
Active Standby Current
in Non Power Down Mode
I
DD3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CK
= 15ns
Input signals are changed one time during
30ns. All other pins
≥
V
DD
-0.2V or
≤
0.2V
640
mA
I
DD3NS
CKE
≥
V
IH
(min), t
CK
=
∞
Input signals are stable.
640
Burst Mode Operating
Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
CL=3
1600
1600
mA
1
CL=2
1600
1440
Auto Refresh Current
I
DD5
t
RRC
≥
t
RRC
(min), All banks active
3840
3520
mA
2
Self Refresh Current
I
DD6
CKE
≤
0.2V
32
mA
3
Burst length=1, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
12.8
mA
4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYM71V16M635BT6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x8|SDR SDRAM - SO DIMM 128MB
HYM71V16M635BT8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x8|SDR SDRAM - SO DIMM 128MB
HYM71V16M635HCLT6 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x8|SDR SDRAM - SO DIMM 128MB
HYM71V16M635HCLT6-H 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
HYM71V16M635HCLT6-K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x72 SDRAM Module
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