- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367378 > HYM71V16635BT6 16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB PDF資料下載
參數(shù)資料
| 型號(hào)： | HYM71V16635BT6 |
| 英文描述： | 16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB |
| 中文描述： | 16Mx64 | 3.3 |鉀/ ? | x8 | SDRAM的特別提款權(quán)-無(wú)緩沖DIMM 128MB的 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大小： | 355K |
| 代理商： | HYM71V16635BT6 |
當(dāng)前第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)
32Mx64bits
PC133 SDRAM Unbuffered DIMM
based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.1/Nov. 01
HYM71V32635BT8 Series
Preliminary
DESCRIPTION
The Hynix HYM71V32635BT8 Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen 16Mx8bits
CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy
printed circuit board. One 0.22uF and one 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V32635BT8 Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes
memory. The Hynix HYM71V32635BT8 Series are fully synchronous operation referenced to the positive edge of the clock . All inputs
and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high band-
width.
FEATURES
PC133/PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.15” (29.21mm) Height PCB with double sided com-
ponents
Single 3.3
±
0.3V power supply
All device pins are compatible with LVTTL interface
Data mask function by DQM
SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4 or 8 or Full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
Programmable CAS Latency ; 2, 3 Clocks
ORDERING INFORMATION
Part No.
Clock
Frequency
Internal
Bank
Ref.
Power
SDRAM
Package
Plating
HYM71V32635BT8-K
133MHz
4K
Normal
TSOP-II
Gold
HYM71V32635BT8-H
HYM71V32635BLT8-K
Low Power
HYM71V32635BLT8-H
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM71V16635BT8 | 16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM71V16635HCLT8P-H | SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC |
| HYM71V16635HCLT8P-K | SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC |
| HYM71V16635HCT6 | 16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM71V16635HCT8 | 16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM71V16635BT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM71V16635HCLT8P-H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC |
| HYM71V16635HCLT8P-K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC |
| HYM71V16635HCT6 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB |
| HYM71V16635HCT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:16Mx64|3.3V|K/H|x8|SDR SDRAM - Unbuffered DIMM 128MB |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。