- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370796 > HYM641010GS-60- (SIEMENS AG) 1M x 64-Bit Dynamic RAM Module PDF資料下載
參數(shù)資料
| 型號： | HYM641010GS-60- |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M x 64-Bit Dynamic RAM Module |
| 中文描述： | 100萬× 64位動態(tài)隨機存儲器模塊 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 82K |
| 代理商： | HYM641010GS-60- |
Semiconductor Group
7
HYM 641010/20GS-60/-70
1M x 64 Module
AC Characteristics
(note: 5,6,7,8)
T
A
= 0 to 70 °C,
V
CC
= 5.0
±
10 %
Parameter
Symbol
-60
-70
Unit
Note
min.
max.
min.
max.
common parameters
Random read or write cycle time
t
RC
t
RP
t
RAS
t
CAS
t
CP
t
ASR
t
RAH
t
ASC
t
CAH
t
RCD
t
RAD
t
RSH
t
CSH
t
CRP
t
T
t
REF
110
–
130
–
ns
RAS precharge time
40
–
50
–
ns
RAS pulse width
60
100k
70
100k
ns
CAS pulse width
15
100k
20
100k
ns
CAS precharge time
10
–
10
–
ns
Row address setup time
5
–
5
–
ns
9
Row address hold time
8
–
8
–
ns
10
Column address setup time
2
–
2
–
ns
11
Column address hold time
15
–
20
–
ns
9
RAS to CAS delay time
18
40
18
45
12
RAS to column address delay time
13
25
13
30
ns
12
RAS hold time
20
–
25
–
ns
9
CAS hold time
58
–
68
–
ns
10
CAS to RAS precharge time
10
–
10
–
ns
9
Transition time (rise and fall)
3
30
3
30
ns
7
Refresh period
–
16
–
16
ms
Read Cycle
Access time from RAS
t
RAC
t
CAC
t
AA
t
OEA
t
RAL
t
RCS
t
RCH
t
RRH
–
60
–
70
ns
13,14
Access time from CAS
–
20
–
25
ns
9,13,14
Access time from column address
–
35
–
40
ns
9,13, 15
OE access time
–
20
–
25
ns
9,13
Column address to RAS lead time
35
–
40
–
ns
9
Read command setup time
2
–
2
–
ns
11
Read command hold time
2
–
2
–
ns
11,16
Read command hold time referenced
to RAS
0
–
0
–
ns
16
CAS to output in low-Z
t
CLZ
t
OFF
t
OEZ
2
–
2
–
ns
11,13
Output buffer turn-off delay
–
20
–
25
ns
9,17
Output buffer turn-off delay from OE
–
20
–
25
ns
9,17
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM641010GS-70 | 1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-60 | 1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-70 | 1M x 64-Bit Dynamic RAM Module |
| HYM64V2005GU-50 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
| HYM64V2005GU-60 | 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM641010GS-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM641020GS-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 64-Bit Dynamic RAM Module |
| HYM642005GS-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
| HYM642005GS-60 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x64 EDO Page Mode DRAM Module |
發(fā)布緊急采購，3分鐘左右您將得到回復。