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參數(shù)資料
| 型號： | HYM364025S |
| 廠商： | SIEMENS AG |
| 英文描述： | 4M x 36-Bit EDO - DRAM Module |
| 中文描述： | 4米× 36位EDO公司-記憶體模組 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 55K |
| 代理商： | HYM364025S |
Semiconductor Group
1
4M
x
36-Bit EDO - DRAM Module
HYM364025S/GS-50/-60
SIMM modules with 4 194 304 words by 36-Bit organization
for PC main memory applications
Fast access and cycle time
50 ns access time
84 ns cycle time (-50 version)
60 ns access time
104 ns cycle time (-60 version)
Hyper Page Mode (EDO) capability
20 ns cycle time (-50 version)
25 ns cycle time (-60 version)
Single + 5 V (
±
10 %) supply
Low power dissipation
max. 6820 mW active (-50 version)
max. 6160 mW active (-60 version)
CMOS – 66 mW standby
TTL
–132 mW standby
CAS-before-RAS refresh
RAS-only-refresh
Hidden-refresh
Decoupling capacitors mounted on substrate
All inputs, outputs and clocks fully TTL compatible
72 pin Single in-Line Memory Module (L-SIM-72-12) with 22.9 mm (900 mil) height
Utilizes eight 4Mx4-EDO-DRAMs and four 4Mx1-EDO-DRAMs in SOJ packages
2048 refresh cycles / 32 ms
Optimized for use in byte-write parity applications
Tin-Lead contact pads (S-version)
Gold contact pads (GS - version)
4.97
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYM364025S-50 | 4M x 36-Bit EDO - DRAM Module |
| HYM364025S-60 | 4M x 36-Bit EDO - DRAM Module |
| HYM364025GS-50 | 4M x 36-Bit EDO - DRAM Module |
| HYM364025GS-60 | 4M x 36-Bit EDO - DRAM Module |
| HYM368035S | 8M x 36-Bit EDO-DRAM Module |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYM364025S-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO - DRAM Module |
| HYM364025S-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO - DRAM Module |
| HYM364035GS-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module |
| HYM364035S | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module |
| HYM364035S-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 36-Bit EDO-DRAM Module |
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