
Semiconductor Group
8
HYM 324025S/GS-50/-60
4M x 32-Bit EDO-Module
Early Write Cycle
Write command hold time
t
WCH
t
WP
t
WCS
t
RWL
t
CWL
t
DS
t
DH
8
–
10
–
ns
Write command pulse width
8
–
10
–
ns
Write command setup time
0
–
0
–
ns
13
Write command to RAS lead time
13
–
15
–
ns
Write command to CAS lead time
13
–
15
–
ns
Data setup time
0
–
0
–
ns
14
Data hold time
8
–
10
–
ns
14
Hyper Page Mode (EDO) Cycle
Hyper page mode (EDO) cycle time
t
HPC
t
CP
t
CPA
t
COH
t
RAS
t
RHCP
20
–
25
–
ns
CAS precharge time
8
–
10
–
ns
Access time from CAS precharge
–
27
–
32
ns
7
Output data hold time
5
–
5
–
ns
RAS pulse width in hyper page mode
CAS precharge to RAS Delay
50
27
200k
–
60
32
200k
–
ns
ns
CAS before RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
10
–
10
–
ns
CAS hold time
10
–
10
–
ns
RAS to CAS precharge time
5
–
5
–
ns
Write to RAS precharge time
10
–
10
–
ns
Write hold time referenced to RAS
10
–
10
–
ns
AC Characteristics
(cont’d)
5)6)
T
A
= 0 to 70 °C,
V
CC
= 5 V
±
10 %,
t
T
= 2 ns
Parameter
Symbol
Limit Values
-50
Unit
Note
-60
min.
max.
min.
max.