參數(shù)資料
型號(hào): HYE18P32160AC
廠商: INFINEON TECHNOLOGIES AG
英文描述: 32M Synchronous Burst CellularRAM
中文描述: 32M的同步突發(fā)的CellularRAM
文件頁(yè)數(shù): 36/53頁(yè)
文件大?。?/td> 1426K
代理商: HYE18P32160AC
t
CRES
t
CREH
HYE18P32160AC(-/L)9.6/12.5/15
32M Synchronous Burst CellularRAM
Functional Description
Data Sheet
36
V2.0, 2003-12-16
Table 14
Parameter
Timing Parameters - Asynchronous Write
Symbol
9.6, 12.5
Min.
70
0
70
0
70
5
70
70
40
10
10
10
3
20
0
5
0
15
Unit
Notes
Max.
10
8
Min.
85
0
85
0
85
7
85
85
45
15
15
15
3
20
0
5
0
Max.
10
10
Write cycle time
Address (incl. CRE) set-up time
Address valid to end of write
Write recovery time
Chip select pulse width low time
Chip select to end of write
ADV high time
ADV setup to end of write
Byte control valid to end of write
Write pulse width
Write pulse pause
CS high time when toggling
UB, LB high time when toggling
Write to output disable
End of write to output enable (OE = low)
Write data setup time
Write data hold time
CRE setup time (to WE = CE = low)
CRE hold time (from WE high)
t
WC
t
AS
t
AW
t
WR
t
CSL
t
CW
t
VPH
t
VS
t
BW
t
WP
t
WPH
t
CPH
t
BPH
t
WHZ
t
OW
t
DW
t
DH
ns
ns
ns
ns
μ
s
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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