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參數資料
| 型號： | HYB514400BT-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 24V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88% |
| 中文描述： | 1M X 4 FAST PAGE DRAM, 70 ns, PDSO20 |
| 文件頁數： | 17/24頁 |
| 文件大?。?/td> | 124K |
| 代理商： | HYB514400BT-70 |
HYB 514400BJ-50/-60
1M
×
4 DRAM
Semiconductor Group
17
1998-10-01
RAS-Only Refresh Cycle
SPT03032
"H" or "L"
OH
OL
(Outputs)
Address
I/O
V
V
V
IL
IH
V
Row
CAS
RAS
IL
V
V
IH
V
IL
IH
V
RAH
ASR
t
t
RAS
t
Row
Z
Hi
t
RC
t
RPC
ASR
t
CRP
t
RP
t
相關PDF資料 |
PDF描述 |
|---|---|
| HYB 514400BJ-60 | 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM) |
| HYB514400BJ-70 | 1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BT-80 | RP12 (A) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 5V; 2:1 Wide Input Voltage Range; 12 Watts Output Power; 1.6kVDC Isolation; UL Certified; Over Current Protection; Five-Sided Shield; Standard DIP24 and SMD-Pinning; Efficiency to 88% |
| HYB514400BJ | 1M x 4-BIT DYNAMIC RAM LOW POWER 1M x 4-BIT DYNAMIC RAM |
| HYB514400BJ-50- | RES 12K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HYB514400BT-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BTL-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 Fast Page Mode DRAM |
| HYB514400BTL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BTL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
| HYB514400BTL-80 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 4-Bit Dynamic RAM Low Power 1M x 4-Bit Dynamic RAM |
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