參數(shù)資料
型號(hào)： HYB5118165BSJBST-50-
廠商： SIEMENS AG
英文描述： 1M x 16-Bit Dynamic RAM 1k Refresh
中文描述： 100萬(wàn)× 16位動(dòng)態(tài)隨機(jī)存儲(chǔ)器經(jīng)銷(xiāo)商刷新
文件頁(yè)數(shù)： 6/26頁(yè)
文件大?。?/td> 269K
代理商： HYB5118165BSJBST-50-
Semiconductor Group
6
HYB 5116(8)165BSJ-50/-60/-70
1M x 16-EDO DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics
( note : values in brackets for HYB5118165BSJ)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %;
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
Vcc+0.5
V
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling:
t
RC
=
t
RC
min.)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
Average
V
CC
supply current, during RAS-only
refresh cycles:
I
CC1
–
–
–
100(200)
90 (180)
80 (160)
mA
mA
mA
2) 3) 4)
–
2
mA
–
-50 ns version
-60 ns version
-70 ns version
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min.)
I
CC3
–
–
–
100(200)
90 (180)
80 (160)
mA
mA
mA
2) 4)
相關(guān)PDF資料
PDF描述
HYB5118165BSJ-50 1M x 16-Bit Dynamic RAM 1k Refresh
HYB514256BJ-50 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256BJ-60 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256BJ-70 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
HYB514256BJL-50 256 K x 4-Bit Dynamic RAM Low Power 256 K x 4-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5118165BST-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB5118165BST-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB514100AJ-60 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 Fast Page Mode DRAM
HYB514100AJ-70 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 Fast Page Mode DRAM
HYB514100AJ-80 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 Fast Page Mode DRAM
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