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參數(shù)資料
| 型號： | HYB5117405BJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| 中文描述： | 4M X 4 EDO DRAM, 60 ns, PDSO24 |
| 封裝： | 0.300 INCH, PLASTIC, SOJ-24 |
| 文件頁數(shù)： | 2/28頁 |
| 文件大?。?/td> | 323K |
| 代理商： | HYB5117405BJ-60 |
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Semiconductor Group
2
HYB5116(7)405BJ/BT-50/-60/-70
4M x 4-EDO DRAM
The HYB 5116(7)405BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The
HYB 5116(7)405BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as
advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 5116(7)405BJ/BT to be packaged in a standard
SOJ 26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high
system bit densities and are compatible with commonly used automatic testing and insertion
equipment. System-oriented features include single + 5 V (
±
10 %) power supply, direct interfacing
with high-performance logic device families such as Schottky TTL.
Ordering Information
Pin Names
Type
Ordering Code
Package
Descriptions
HYB 5116405BJ-50
Q67100-Q1098
P-SOJ-26/24 300 mil
DRAM (access time 50 ns)
HYB 5116405BJ-60
Q67100-Q1099
P-SOJ-26/24 300 mil
DRAM (access time 60 ns)
HYB 5116405BJ-70
Q67100-Q1100
P-SOJ-26/24 300 mil
DRAM (access time 70 ns)
HYB 5116405BT-50
on request
P-TSOPII-26/24 300mil
DRAM (access time 50 ns)
HYB 5116405BT-60
on request
P-TSOPII-26/24 300mil
DRAM (access time 60 ns)
HYB 5116405BT-70
on request
P-TSOPII-26/24 300mil
DRAM (access time 70 ns)
HYB 5117405BJ-50
Q67100-Q1101
P-SOJ-26/24 300 mil
DRAM (access time 50 ns)
HYB 5117405BJ-60
Q67100-Q1102
P-SOJ-26/24 300 mil
DRAM (access time 60 ns)
HYB 5117405BJ-70
Q67100-Q1103
P-SOJ-26/24 300 mil
DRAM (access time 70 ns)
HYB 5117405BT-50
on request
P-TSOPII-26/24 300mil
DRAM (access time 50 ns)
HYB 5117405BT-60
on request
P-TSOPII-26/24 300mil
DRAM (access time 60 ns)
HYB 5117405BT-70
on request
P-TSOPII-26/24 300mil
DRAM (access time 70 ns)
A0-A11
Row Address Inputs for HYB5116405
A0-A9
Column Address Inputs for HYB5116405
A0-A10
Row and Column Address Inputs for HYB5117405
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O4
Data Input/Output
CAS
Column Address Strobe
WE
V
CC
V
SS
N.C.
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
not connected
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB5117405BJ-70 | BACKSHELL DB50 GREY PLASTIC |
| HYB5116405BJ-50 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5116405BJ-50- | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5116405BJ-60 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5116405BJ-70 | 4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB5117405BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117405BT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117405BT-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117405BT-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB5117800AJ-50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Fast Page Mode DRAM |
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