參數(shù)資料
型號(hào)： HYB5117405BJ-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
中文描述： 4M X 4 EDO DRAM, 50 ns, PDSO24
封裝： 0.300 INCH, PLASTIC, SOJ-24
文件頁(yè)數(shù)： 6/28頁(yè)
文件大?。?/td> 323K
代理商： HYB5117405BJ-50
Semiconductor Group
6
HYB5116(7)405BJ/BT-50/-60/-70
4M x 4-EDO DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,7.0) V
Power supply voltage...................................................................................................-1.0V to 7.0 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics( note : values in brackets for HYB 5117405 BJ/BT)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 5 V
±
10 %;
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
Vcc+0.5
V
1)
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
μ
A
1)
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling:
t
RC
=
t
RC
min.)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
Average
V
CC
supply current, during RAS-only
refresh cycles:
I
CC1
–
–
–
100(120)
90 (110)
80 (100)
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
–
2
mA
–
-50 ns version
-60 ns version
-70 ns version
(RAS cycling, CAS =
V
IH
,
t
RC
=
t
RC
min.)
I
CC3
–
–
–
100(120)
90 (110)
80 (100)
mA
mA
mA
2) 4)
2) 4)
2) 4)
相關(guān)PDF資料
PDF描述
HYB5117800BSJ-50 2M x 8-Bit Dynamic RAM
HYB5117800BSJ-70 2M x 8-Bit Dynamic RAM
HYB5117800BSJ-60 2M x 8 - Bit Dynamic RAM 2k Refresh
HYB5117805BJ-60 2M x 8 - Bit Dynamic RAM 2k Refresh
HYB5117805BJ-70 2M x 8 - Bit Dynamic RAM 2k Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB5117405BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BT-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BT-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB5117405BT-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh
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