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參數(shù)資料
| 型號： | HYB39S64800BT-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | VINYL TAPE 3/4 X 60' 1.5 |
| 中文描述： | 64兆位同步DRAM |
| 文件頁數(shù)： | 9/53頁 |
| 文件大小： | 418K |
| 代理商： | HYB39S64800BT-7.5 |
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HYB 39S64400/800/160BT(L)
64-MBit Synchronous DRAM
Data Book
9
12.99
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the truth table for the operation commands.
Notes
1.
V = Valid, x = Don’t Care, L = Low Level, H = High Level
2. CKEn signal is input level when commands are provided, CKEn-1 signal is input level one clock
before the commands are provided.
3. This is the state of the banks designated by BA0, BA1 signals.
4. Device state is Full Page Burst operation
5. Power Down Mode can not entry in the burst cycle. When this command assert in the burst mode
cycle device is clock suspend mode.
Operation
Device
State
Idle
3
Active
3
Active
3
CKE
n-1
CKE
n
CS
RAS
CAS
WE
DQM A0-9,
A11
A10
BA0
BA1
Row Activate (ACT)
H
X
L
L
H
H
X
V
V
V
Read (READ)
H
X
L
H
L
H
X
V
L
V
Read w/ Autoprecharge
(READA)
H
X
L
H
L
H
X
V
H
V
Write (WRITE)
Active
3
Active
3
H
X
L
H
L
L
X
V
L
V
Write w/ Autoprecharge
(WRITEA)
H
X
L
H
L
L
X
V
H
V
Row Precharge (PRE)
Any
H
X
L
L
H
L
X
X
L
V
Precharge All (PREA)
Any
H
X
L
L
H
L
X
X
H
X
Mode Register Set (MRS)
Idle
H
X
L
L
L
L
X
V
V
V
No Operation (NOP)
Any
H
X
L
H
H
H
X
X
X
X
Device Deselect (INHBT)
Any
H
X
H
X
X
X
X
X
X
X
Auto Refresh (REFA)
Idle
H
H
L
L
L
H
X
X
X
X
Self Refresh Entry (REFS-EN) Idle
H
L
L
L
L
H
X
X
X
X
Self Refresh Exit (REFS-EX)
Idle
(Self
Refr.)
L
H
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Entry (PDN-EN) Idle
Active
5
H
L
H
X
X
X
X
X
X
X
L
H
H
X
Power Down Exit (PDN-EX)
Any
(Power
Down)
L
H
H
X
X
X
X
X
X
X
L
H
H
L
Data Write/Output Enable
Active
H
X
X
X
X
X
L
X
X
X
Data Write/Output Disable
Active
H
X
X
X
X
X
H
X
X
X
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PDF描述 |
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| HYB39S64800BT-8 | TAPE PLASTIC VINYL 3/4 X 66'BLK |
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| HYB39S64800 | 64 MBit Synchronous DRAM |
| HYB41256 | Wirewound Inductor; Inductor Type:Standard; Inductance:10nH; Inductance Tolerance:+/- 5 %; Current Rating:400mA; Series:CM160808; Package/Case:0603; Core Material:Alumina Ceramic; Leaded Process Compatible:No RoHS Compliant: No |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S64800BT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
| HYB39S64800BTL-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HYB39S64800BTL-7 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HYB39S64800BTL-7.5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM |
| HYB39S64800CT | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:64-MBit Synchronous DRAM |
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