參數(shù)資料
型號: HYB39S256400DTL-7
廠商: INFINEON TECHNOLOGIES AG
元件分類: 參考電壓二極管
英文描述: surface mount silicon Zener diodes
中文描述: 表面貼裝硅穩(wěn)壓二極管
文件頁數(shù): 21/28頁
文件大小: 630K
代理商: HYB39S256400DTL-7
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Electrical Characteristics
Data Sheet
21
Rev. 1.02, 2004-02
10072003-13LE-FGQQ
Table 12
Parameter
Input and Output Capacitances
1)
1) TA = 0 to 70
°
C; VDD,VDDQ = 3.3 V ± 0.3 V, f = 1 MHz
2) Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages are lower by 0.5 pF
Symbol
Values
2)
min.
2.5
2.5
Unit
max.
3.5
3.8
Input Capacitances: CK, CK
Input Capacitance
(A0-A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
C
I1
C
I2
pF
pF
C
I0
4.0
6.0
pF
Table 13
Parameter
Operating Current
One bank active, Burst length = 1
Precharge Standby Current in Power Down Mode
Precharge Standby Current in Non-Power Down Mode
No Operating Current
active state ( max. 4 banks)
I
DD
Conditions
Symbol
I
DD1
I
DD2P
I
DD2N
I
DD3N
I
DD3P
I
DD4
Burst Operating Current
Read command cycling
Auto Refresh Current
Auto Refresh command cycling
Self Refresh Current (standard components)
Self Refresh Mode, CKE=0.2V,
t
CK
=infinity
Self Refresh Current (low power components)
Self Refresh Mode, CKE=0.2V,
t
CK
=infinity
I
DD5
I
DD6
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