參數(shù)資料
型號(hào): HYB39S256400DTL-75
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-MBit Synchronous DRAM
中文描述: 256兆位同步DRAM
文件頁(yè)數(shù): 22/28頁(yè)
文件大?。?/td> 630K
代理商: HYB39S256400DTL-75
HYB39S256[40/80/16]0D[C/T](L)
256-MBit Synchronous DRAM
Electrical Characteristics
Data Sheet
22
Rev. 1.02, 2004-02
10072003-13LE-FGQQ
Table 14
Symbol
I
DD
Specifications and Conditions
1)
1)
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V ± 0.3 V
2) These parameters depend on the cycle rate. All values are measured at 166 MHz for -6, at 133 MHz for
-7 and -7.5 and at 100 MHz for -8 components with the outputs open. Input signals are changed once during
t
CK
.
3) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is
assumed and the
V
DDQ
current is excluded.
4)
t
RFC
=
t
RFC(min)
“burst refresh”,
t
RFC
= 7.8 μs “distributed refresh”.
-6
-7
-7.5
-8
Unit
Note/ Test Condition
max.
I
DD1
I
DD2P
I
DD2N
I
DD3N
I
DD3P
I
DD4
I
DD5
t
RC
=
t
RC(min)
,
I
O
= 0 mA
CS =
V
IH (min.)
, CKE
V
IL(max)
CS =
V
IH (min.)
, CKE
V
IH(min)
CS =
V
IH(min)
, CKE
V
IH(min.)
CS =
V
IH(min)
, CKE
V
IL(max.)
100
2
35
40
5
110
220
3
3
1.5
0.85
80
2
30
35
5
90
190
3
3
1.5
0.85
80
2
30
35
5
90
190
3
3
1.5
0.85
80
2
25
30
5
70
160
3
3
1.5
0.85
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
2)3)
2)
2)
2)
2)
2)3)
t
RFC
=
t
RFC(min)
t
RFC
= 7.8 μs
x4, x8, x16
4)
I
DD6
standard
components
low power
components
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