- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370792 > HYB39S16400BT-10 (SIEMENS A G) JOYSTICK, POTENTIOMETER, 3 AXIS; Angle:20(degree); Centres, fixing:32.2mm; Depth, external:41.5mm; Diameter, panel cut-out:39mm; Length / Height, external:73mm; Material:ABS; Operations, mechanical No. of:1000000; Power, DC:0.125W; RoHS Compliant: Yes PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB39S16400BT-10 |
| 廠商： | SIEMENS A G |
| 元件分類(lèi)： | DRAM |
| 英文描述： | JOYSTICK, POTENTIOMETER, 3 AXIS; Angle:20(degree); Centres, fixing:32.2mm; Depth, external:41.5mm; Diameter, panel cut-out:39mm; Length / Height, external:73mm; Material:ABS; Operations, mechanical No. of:1000000; Power, DC:0.125W; RoHS Compliant: Yes |
| 中文描述： | 4M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO44 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-44 |
| 文件頁(yè)數(shù)： | 8/19頁(yè) |
| 文件大小： | 101K |
| 代理商： | HYB39S16400BT-10 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)
HYB 39S16400/800/160CT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
8
1998-10-01
Operation Definition
All of SDRAM operations are defined by states of control signals CS, RAS, CAS, WE, and DQM at
the positive edge of the clock. The following list shows the most important operation commands.
Mode Register
For application flexibility, a CAS latency, a burst length, and a burst sequence can be programmed
in the SDRAM mode register. The mode set operation must be done before any activate command
after the initial power up. Any content of the mode register can be altered by reexecuting the mode
set command. Both banks must be in precharged state and CKE must be high at least one clock
before the mode set operation. After the mode register is set, a Standby or NOP command is
required. Low signals of RAS, CAS, and WE at the positive edge of the clock activate the mode set
operation. Address input data at this timing defines parameters to be set as shown in the following
table.
Operation
CS
RAS
CAS
WE
(L/U)DQM
Standby, Ignore RAS, CAS, WE and Address
H
X
X
X
X
Row Address Strobe and Activating a Bank
L
L
H
H
X
Column Address Strobe and Read Command
L
H
L
H
X
Column Address Strobe and Write Command
L
H
L
L
X
Precharge Command
L
L
H
L
X
Burst Stop Command
L
H
H
L
X
Self Refresh Entry
L
L
L
H
X
Mode Register Set Command
L
L
L
L
X
Write Enable/Output Enable
X
X
X
X
L
Write Inhibit/Output Disable
X
X
X
X
H
No Operation (NOP)
L
H
H
H
X
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB39S16400CT-10 | 16 MBit Synchronous DRAM |
| HYB39S16800CT-10 | 16 MBit Synchronous DRAM |
| HYB39S256160T | 256 MBit Synchronous DRAM(256M位同步動(dòng)態(tài)RAM) |
| HYB39S256800 | 256 MBit Synchronous DRAM(256M位同步動(dòng)態(tài)RAM) |
| HYB39S256400DC-6 | 256 MBit Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16400BT-8 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16400CT-10 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16400CT-8 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16400T-10 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 SDRAM |
| HYB39S16400T-12 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x4 SDRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。