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參數(shù)資料
| 型號： | HYB39S16160BT-10 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | SWITCH, SPST |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50 |
| 文件頁數(shù)： | 14/22頁 |
| 文件大?。?/td> | 147K |
| 代理商： | HYB39S16160BT-10 |
HYB 39S16400/800/160AT-8/-10
16 MBit Synchronous DRAM
Semiconductor Group
14
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................ 0 to + 70
°
C
Storage temperature range.....................................................................................
– 55 to + 150
°
C
Input/output voltage .......................................................................... – 0.5 to min (
V
CC
+ 0.5, 4.6) V
Power supply voltage
V
DD
/
V
DDQ
............................................................................. – 1.0 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operation and Characteristics for LV-TTL Versions
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
CC
+ 0.3
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2
Input low voltage
Output high voltage (
I
OUT
= – 2.0 mA)
Output low voltage (
I
OUT
= 2.0 mA)
Input leakage current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
CC
)
– 0.3
V
1, 2
2.4
–
V
–
0.4
V
μ
A
– 10
10
I
O(L)
– 10
10
μ
A
Symbol max. Values
C
I1
4
C
I2
4
C
IO
5
C
REF
8
Unit
Input capacitance (A0 to A11)
pF
Input capacitance (RAS, CAS, WE, CS, CLK, CKE, DQM)
pF
Output capacitance (DQ)
V
REF
pF
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16160BT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16160CT-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16160CT6 | 制造商:SIEMENS 功能描述:New |
| HYB39S16160CT-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
| HYB39S16160CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
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