參數(shù)資料
型號(hào)： HYB3164160ATL-60
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 4M x 16-Bit Dynamic RAM
中文描述： 4M X 16 FAST PAGE DRAM, 60 ns, PDSO50
文件頁(yè)數(shù)： 8/26頁(yè)
文件大小： 216K
代理商： HYB3164160ATL-60
Semiconductor Group
8
HYB3164(5/6)160AT(L)-40/-50/-60
4M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range..............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.3 W
Data out current (short circuit)..................................................................................................50 mA
Note
Stresses above those listed under Absolute Maximum Ratings“ may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Input high voltage
V
IH
V
IL
V
OH
2.0
Vcc+0.3
V
1)
Input low voltage
– 0.3
0.8
V
1)
Output high voltage (LVTTL)
Output H“ level voltage (Iout = -2mA)
2.4
–
V
Output low voltage (LVTTL)
Output L“l(fā)evel voltage (Iout = +2mA)
V
OL
–
0.4
V
Output high voltage (LVCMOS)
Output H“ level voltage (Iout = -100uA)
V
OH
Vcc-0.2 -
V
Ouput low voltage (LVCMOS)
Output L“ level voltage (Iout = +100uA)
V
OL
-
0.2
V
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
I
I(L)
– 2
2
μ
A
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
I
O(L)
– 2
2
μ
A
相關(guān)PDF資料
PDF描述
HYB3165160ATL-60 4M x 16-Bit Dynamic RAM
HYB3166160ATL-60 4M x 16-Bit Dynamic RAM
HYB3166160AT-50 Wideband Fully Differential Amplifier 16-QFN -40 to 85
HYB3164160AT-40 4M x 16-Bit Dynamic RAM
HYB3165160AT-40 4M x 16-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3164160T 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164160T50 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB3164160T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3164160T60 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 Fast Page Mode DRAM
HYB3164160T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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