參數(shù)資料
型號(hào)： HYB3118160BST-50
廠商： SIEMENS A G
元件分類： DRAM
英文描述： 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
中文描述： 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
文件頁數(shù)： 6/25頁
文件大?。?/td> 258K
代理商： HYB3118160BST-50
Semiconductor Group
6
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
Absolute Maximum Ratings
Operating temperature range ............................................................................................0 to 70 °C
Storage temperature range.........................................................................................– 55 to 150 °C
Soldering time.............................................................................................................................10 s
Input/output voltage ................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage..................................................................................................-0.5 V to 4.6 V
Power dissipation..................................................................................................................... 1.0 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may affect device
reliability.
DC Characteristics (values in brackets for HYB3116160BSJ)
T
A
= 0 to 70 °C,
V
SS
= 0 V,
V
CC
= 3.3 V
±
0.3 V,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
2.0
max.
Vcc+0.5
Input high voltage
V
IH
V
IL
V
OH
V
OL
V
OH
V
OL
I
I(L)
V
1)
Input low voltage
TTL Output high voltage (
I
OUT
= – 2 mA)
TTL Output low voltage (
I
OUT
= 2 mA)
CMOS Output high voltage (
I
OUT
= – 100
μ
A)
CMOS Output low voltage (
I
OUT
= 100
μ
A)
Input leakage current,any input
(0 V
≤
V
IH
≤
Vcc + 0.3V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V
≤
V
OUT
≤
Vcc + 0.3V)
Average
V
CC
supply current:
– 0.5
0.8
V
1)
2.4
–
V
1)
–
0.4
V
1)
Vcc-0.2
–
V
1)
–
0.2
V
μ
A
1)
– 10
10
1)
I
O(L)
– 10
10
μ
A
1)
-50 ns version
-60 ns version
-70 ns version
(RAS, CAS, address cycling,
t
RC
=
t
RC
min.
)
Standby
V
CC
supply current (RAS = CAS =
V
IH
)
I
CC2
I
CC1
–
–
–
200(100)
180 (90)
160 (80)
mA
mA
mA
2) 3) 4)
2) 3) 4)
2) 3) 4)
–
2
mA
–
相關(guān)PDF資料
PDF描述
HYB3116160BSJ-70 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-70 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-60 High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
HYB3116160BSJ-50 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BSJ-50 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB3118160BST-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118160BST-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
HYB3118165BSJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB3118165BSJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
HYB3118165BST-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*