- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370787 > HYB3116400BTL-70 (SIEMENS A G) RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB3116400BTL-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
| 中文描述： | 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24 |
| 文件頁(yè)數(shù)： | 2/26頁(yè) |
| 文件大小： | 253K |
| 代理商： | HYB3116400BTL-70 |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)
Semiconductor Group
2
HYB 3116(7)400BJ/BT(L) -50/-60/-70
3.3V 4Mx4-DRAM
The HYB 3116(7)400BJ/BT is a 16MBit dynamic RAM organized as 4194304 words by 4-bits. The
HYB 3116(7)400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as
advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(7)400BJ/BT to be packaged in a standard
SOJ 26/24 300 mil or TSOPII-26/24 300 mil wide plastic package. These packages provide high
system bit densities and are compatible with commonly used automatic testing and insertion
equipment. System-oriented features include single + 3.3 V (± 0.3 V) power supply, direct
interfacing with high-performance logic device families.The HYB3116400BTL parts have a very low
power sleep mode“ supported by Self Refresh.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 3117400BJ-50
P-SOJ-26/24-1 300 mil
DRAM (access time 50 ns)
HYB 3117400BJ-60
P-SOJ-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3117400BJ-70
P-SOJ-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3117400BT-50
P-TSOPII-26/24-1 300 mil
DRAM (access time 50 ns)
HYB 3117400BT-60
P-TSOPII-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3117400BT-70
P-TSOPII-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3116400BJ-50
P-SOJ-26/24-1 300 mil
DRAM (access time 50 ns)
HYB 3116400BJ-60
P-SOJ-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3116400BJ-70
P-SOJ-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3116400BT-50
P-TSOPII-26/24-1 300 mil
DRAM (access time 50 ns)
HYB 3116400BT-60
P-TSOPII-26/24-1 300 mil
DRAM (access time 60 ns)
HYB 3116400BT-70
P-TSOPII-26/24-1 300 mil
DRAM (access time 70 ns)
HYB 3116400BTL-50
P-TSOPII-26/24-1 300 mil
LP-DRAM (access time 50 ns)
HYB 3116400BTL-60
P-TSOPII-26/24-1 300 mil
LP-DRAM (access time 60 ns)
HYB 3116400BTL-70
P-TSOPII-26/24-1 300 mil
LP-DRAM (access time 70 ns)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3117400BJ-70 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BJ-70 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3117400BJ-60 | Driver IC; Number of Drivers:8; Package/Case:18-DIP; Driver Type:Darlington; Output Current:750mA; Mounting Type:Through Hole; Supply Voltage:5V |
| HYB3117400BT-50 | 3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BT-50 | 3.3V 4M x 4-Bit Dynamic RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116405BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3116405BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BJBTL-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
| HYB3116405BT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit EDO-Dynamic RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。