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參數(shù)資料
| 型號： | HYB3116160BST-70 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| 中文描述： | 1M X 16 FAST PAGE DRAM, 70 ns, PDSO44 |
| 文件頁數(shù)： | 2/25頁 |
| 文件大小： | 258K |
| 代理商： | HYB3116160BST-70 |
Semiconductor Group
2
HYB3116(8)160BSJ/BST(L)-50/-60/-70
3.3V 1M x 16-DRAM
The HYB 3116(8)160BSJ/BST is a 16 MBit dynamic RAM organized as 1 048 576 words by 16 bits.
The HYB 3116(8)160BSJ/BST utilizes a submicron CMOS silicon gate process technology, as well
as advanced circuit techniques to provide wide operating margins, both internally and for the system
user. Multiplexed address inputs permit the HYB 3116(8)160BSJ/BST to be packaged in standard
SOJ-42 and TSOPII-50/44 plastic package with 400mil width. These packages provide high system
bit densities and are compatible with commonly used automatic testing and insertion equipment.
System-oriented features include single + 3.3 V (
±
0.3 V) power supply, direct interfacing with high-
performance logic device families.The HYB3116160BSTL parts have a very low power sleep
mode“ suppported by Self Refresh.
Ordering Information
Pin Names
Type
Ordering Code
Package
Descriptions
HYB 3116160BSJ-50
on request
P-SOJ-42 400 mil
DRAM (access time 50 ns)
HYB 3116160BSJ-60
on request
P-SOJ-42 400 mil
DRAM (access time 60 ns)
HYB 3116160BSJ-70
on request
P-SOJ-42 400 mil
DRAM (access time 70 ns)
HYB 3118160BSJ-50
on request
P-SOJ-42 400 mil
DRAM (access time 50 ns)
HYB 3118160BSJ-60
on request
P-SOJ-42 400 mil
DRAM (access time 60 ns)
HYB 3118160BSJ-70
on request
P-SOJ-42 400 mil
DRAM (access time 70 ns)
HYB 3116160BST-50
on request
P-TSOPII-50/44 400 mil
DRAM (access time 50 ns)
HYB 3116160BST-60
on request
P-TSOPII-50/44 400 mil
DRAM (access time 60 ns)
HYB 3116160BST-70
on request
P-TSOPII-50/44 400 mil
DRAM (access time 70 ns)
HYB 3118160BST-50
on request
P-TSOPII-50/44 400 mil
DRAM (access time 50 ns)
HYB 3118160BST-60
on request
P-TSOPII-50/44 400 mil
DRAM (access time 60 ns)
HYB 3118160BST-70
on request
P-TSOPII-50/44 400 mil
DRAM (access time 70 ns)
A0 to A9
Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST
A0 to A9
Column Addess Inputs for 1k-refresh version HYB3118160BSJ/BST
A0 to A11
Row Address Inputs for 4k-refresh version HYB3116160BSJ/BST
A0 to A7
Column Address Inputs for 4k-refresh version HYB3116160BSJ/BST
RAS
Row Address Strobe
OE
Output Enable
I/O1-I/O16
Data Input/Output
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
WE
Read/Write Input
V
CC
V
SS
N.C.
Power Supply (+ 3.3 V)
Ground (0 V)
not connected
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3118160BST-70 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BST-60 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3118160BST-60 | 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh |
| HYB3116160BSJ | RES 10K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 5K/REEL-7IN-PA |
| HYB3116160BST-50 | RES 10K-OHM 5% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3116400BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3116400BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
| HYB3116400BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BJBTL-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 4M x 4-Bit Dynamic RAM |
| HYB3116400BT-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 4-Bit Dynamic RAM 2k & 4k Refresh |
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