參數(shù)資料
型號(hào)： HYB25R144180C-840
英文描述： RAMBUS DRAM
中文描述： Rambus的內(nèi)存
文件頁數(shù)： 52/76頁
文件大小： 1218K
代理商： HYB25R144180C-840
HYB25D128400/800/160AT(L)
128-Mbit Double Data Rate SDRAM
Page 52 of 76
2002-05-06
Normal Mode Pulldown and Pullup Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage
lie within the outer bounding lines of the V-I curve.
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed
1.7, for device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity
±
10
%
, for device
drain to source voltages from 0.1 to 1.0V.
Normal Mode Pulldown Characteristics
Normal Mode Pullup Characteristics
0
0.5
1
1.5
2
2.5
0
20
40
60
80
100
120
140
1
O
(
V
OUT
(V)
Maximum
N
ominal
H
igh
N
ominal Low
Minimum
Maximum
N
ominal
H
igh
N
ominal Low
Minimum
V
OUT
(V)
0.5
1
1.5
2
2.5
0
0
-20
-40
-60
-80
-100
-120
-140
-160
1
O
(
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