- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄370745 > HYB18L128160BC-7.5 (INFINEON TECHNOLOGIES AG) BJAWBMSpecialty DRAMs Mobile-RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB18L128160BC-7.5 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | BJAWBMSpecialty DRAMs Mobile-RAM |
| 中文描述： | BJAWBMSpecialty DRAM的移動(dòng)RAM |
| 文件頁數(shù)： | 21/53頁 |
| 文件大?。?/td> | 1328K |
| 代理商： | HYB18L128160BC-7.5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁當(dāng)前第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁
HY[B/E]18L128160B[C/F]-7.5
128-Mbit Mobile-RAM
Functional Description
Data Sheet
21
V1.4, 2004-04-30
2.4.5
READ
Figure 11
READ Command
Subsequent to programming the mode register with CAS latency and burst length, READ bursts are initiated with
a READ command, as shown in
Figure 11
. Basic timings for the DQs are shown in
Figure 12
; they apply to all
read operations and therefore are omitted from all subsequent timing diagrams.
The starting column and bank addresses are provided with the READ command and Auto Precharge is either
enabled or disabled for that burst access. If Auto Precharge is enabled, the row being accessed starts precharge
at the completion of the burst, provided
t
RAS
has been satisfied. For the generic READ commands used in the
following illustrations, Auto Precharge is disabled.
Table 9
Parameter
Timing Parameters for ACTIVE Command
Symbol
- 7.5
Units
Notes
min.
67
19
15
max.
–
–
–
ACTIVE to ACTIVE command period
ACTIVE to READ or WRITE delay
ACTIVE bank A to ACTIVE bank B delay
t
RC
t
RCD
t
RRD
ns
ns
ns
1)
1) These parameters account for the number of clock cycles and depend on the operating frequency as follows:
no. of clock cycles = specified delay / clock period; round up to next integer.
1)
1)
BA0,BA1
BA
WE
CKE
(High)
CLK
RAS
CAS
A0-A8
CA
= Don't Care
BA = Bank Address
CA = Column Address
AP = Auto Precharge
A10
AP
Disable AP
Enable AP
CS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB18L128160BF-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-75 | DRAMs for Mobile Applications |
| HYB18L256160BC-7.5 | BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L256160BF-7.5 | RT ANG PCB CONT .40/1.295 BULK |
| HYB18RL25632AC-4 | MEMORY SPECTRUM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB18L128160BF | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 128-Mbit Mobile-RAM |
| HYB18L128160BF-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
| HYB18L128160BF-75 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:DRAMs for Mobile Applications |
| HYB18L256160B | 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 256-Mbit Mobile-RAM |
| HYB18L256160BC-7.5 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:BJAWBMSpecialty DRAMs Mobile-RAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。