參數(shù)資料
型號(hào): HYB18H256321BF-12
廠商: QIMONDA AG
元件分類: DRAM
英文描述: 256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
中文描述: 8M X 32 SYNCHRONOUS GRAPHICS RAM MODULE, 0.22 ns, PBGA136
封裝: GREEN, PLASTIC, TFBGA-136
文件頁數(shù): 10/41頁
文件大?。?/td> 1302K
代理商: HYB18H256321BF-12
HYB18H256321BF
256-Mbit GDDR3
Internet Data Sheet
Rev. 0.80, 2007-09
09132007-07EM-7OYI
10
2.4
Function Truth Table for CKE
TABLE 5
Function Truth Table II (CKE Table)
Notes
1. CKEn is the logic step at clock edge n; CKEn-1 was the state of CKE at the previous clock edge.
2. Current state is the state of the GDDR3 Graphics RAM immediately prior to clock edge n.
3. COMMAND is the command registered at clock edge n, and ACTION is a result of COMMAND.
4. All states and sequences not shown are illegal or reserved.
5. DESEL or NOP commands should be issued on any clock edges occurring during the
t
XSR
period. A minimum of 1000 clock
cycles is required before applying any other valid command.
11) During Action ACTIVE an ACT command on another banks is allowed considering
t
RRD
. A PRE command on another bank is allowed any
time. WR, WR/A, RD and RD/A are always allowed.
12) During POWER DOWN and SELF REFRESH only the EXIT commands are allowed.
13) AUTO REFRESH starts with issuing the command and ends after
t
RFC
.
14) Actions MODE REGISTER SET and EXTENDED MODE REGISTER SET start with issuing the command and ends after
t
MRD
.
15) Action POWER DOWN EXIT starts with issuing the command and ends after t
XPN
.
16) Action SELF REFRESH EXIT starts with issuing the command and ends after
t
XSC
.
CKE
N-1
CKE
n
CURRENT STATE
COMMAND
ACTION
L
L
Power Down
Self Refresh
Power Down
Self Refresh
All Banks Idle
Bank(s) Active
All Banks Idle
X
X
DESEL or NOP
DESEL or NOP
DESEL or NOP
DESEL or NOP
Auto Refresh
Stay in Power Down
Stay in Self Refresh
Exit Power Down
Exit Self Refresh
5
Entry Precharge Power Down
Entry Active Power Down
Entry Self Refresh
L
H
H
L
相關(guān)PDF資料
PDF描述
HYB18H256321BF-14 256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
HYB18H512321BF 512-Mbit GDDR3 Graphics RAM
HYB18L128160BF DRAMs for Mobile Applications 128-Mbit Mobile-RAM
HYB18L256160B DRAMs for Mobile Applications 256-Mbit Mobile-RAM
HYMP112S64LMP8-C4 DDR2 SDRAM SO-DIMM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB18H256321BF-14 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
HYB18H512321BF 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit GDDR3 Graphics RAM
HYB18H512321BF-08/10 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit GDDR3 Graphics RAM
HYB18H512321BF-11/12/14 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:512-Mbit GDDR3 Graphics RAM
HYB18L128160BC-7.5 制造商:QIMONDA 制造商全稱:QIMONDA 功能描述:DRAMs for Mobile Applications 128-Mbit Mobile-RAM