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參數(shù)資料
| 型號： | HYB 5118165BSJ |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M×16-Bit Dynamic RAM(1M×16位 動態(tài)RAM(快速頁面模式)) |
| 中文描述： | 100萬× 16位動態(tài)隨機存儲器（100萬× 16位動態(tài)隨機存儲器（快速頁面模式）） |
| 文件頁數(shù)： | 2/24頁 |
| 文件大小： | 192K |
| 代理商： | HYB 5118165BSJ |
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
2
1998-10-01
The HYB 5(3)118165 are 16 MBit dynamic RAMs based on die revisions “G” & “F” and organized
as 1 048 576 words by 16-bits. The HYB 5(3)118165 utilizes a submicron CMOS silicon gate
process technology, as well as advanced circuit techniques to provide wide operating margins, both
internally and for the system user. Multiplexed address inputs permit the HYB 5(3)18165 to be
packaged in a standard SOJ-42 and TSOPII-50/44 plastic package with 400 mil width. These
packages provide high system bit densities and are compatible with commonly used automatic
testing and insertion equipment.
Ordering Information
Type
Ordering Code
Package
Descriptions
HYB 5118165BSJ-50
Q67100-Q1107
P-SOJ-42-1 400 mil
5 V 50 ns EDO-DRAM
HYB 5118165BSJ-60
Q67100-Q1108
P-SOJ-42-1 400 mil
5 V 60 ns EDO-DRAM
HYB 3118165BSJ-50
on request
P-SOJ-42-1 400 mil
3.3 V 50 ns EDO-DRAM
HYB 3118165BSJ-60
on request
P-SOJ-42-1 400 mil
3.3 V 60 ns EDO-DRAM
HYB 5118165BST-50
on request
P-TSOPII-50/44-1 400 mil
5 V 50 ns EDO-DRAM
HYB 5118165BST-60
on request
P-TSOPII-50/44-1 400 mil
5 V 60 ns EDO-DRAM
HYB 3118165BST-50
on request
P-TSOPII-50/44-1 400 mil
3.3 V 50 ns EDO-DRAM
HYB 3118165BST-60
on request
P-TSOPII-50/44-1 400 mil
3.3 V 60 ns EDO-DRAM
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 5118165BST-60 | 1M×16-Bit Dynamic RAM(1M×16位 動態(tài)RAM(快速頁面模式)) |
| HYB3118165BSJ-50 | 1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB 514100BJ-60 | 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM) |
| HYB514100BJ-50 | 4M x 1-Bit Dynamic RAM |
| HYB 514100BJ-50 | 4M × 1-Bit Dynamic RAM(4M × 1位動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB5118165BSJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB5118165BSJ-60 | 制造商:Siemens 功能描述:Dynamic RAM, EDO, 1M x 16, 42 Pin, Plastic, SOJ |
| HYB5118165BSJBST-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB5118165BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB5118165BST-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
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