參數(shù)資料
型號(hào): HYB 39S64400CT
廠商: SIEMENS AG
英文描述: 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動(dòng)態(tài)RAM)
中文描述: 64兆比特同步DRAM(6400位(4 × 4分列位× 4)同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 46/52頁(yè)
文件大?。?/td> 346K
代理商: HYB 39S64400CT
HYB39S64400/800/160CT(L)
64MBit Synchronous DRAM
Semiconductor Group
46
19. Random Row Write (Interleaving Banks) with Precharge
19.1 CAS Latency = 2
DBx4
DAx1
BS
AP
Addr.
DQ
DQM
Activate
Command
Bank A
Hi-Z
Write
Command
Bank A
DAx0
RAx
RAx
RCD
t
CAx
Command
Bank A
Command
Bank B
Command
Bank B
DAx4
DAx2
DAx3
Activate
DAx5
DAx6
RBx
RBx
Command
Bank A
Precharge
Write
DBx0
DAx7
DBx1
Activate
DBx2
DBx3
WR
CBx
t
RP
t
RAy
RAy
CLK
CKE
CS
RAS
CAS
WE
T0
High
CK2
t
T1
T2
T8
T4
T3
T5
T6
T7
T11
T9
T10
T12
T13
Command
Bank A
SPT03927
Command
Bank B
Precharge
DBx7
DBx5
DBx6
Write
DAy0
DAy1
CAy
WR
t
DAy4
DAy3
DAy2
T19
Burst Length = 8, CAS Latency = 2
T16
T15
T14
T17
T18
T20
T21 T22
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