參數(shù)資料
型號： HYB 39S256400CT
廠商： SIEMENS AG
英文描述： 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動態(tài)RAM)
中文描述： 256兆位（4banks × 16兆× 4）同步DRAM（256M（4列× 1,600位× 4）同步動態(tài)RAM）的
文件頁數(shù)： 14/41頁
文件大小： 327K
代理商： HYB 39S256400CT
INFINEON Technologies
14
1.00
HYB39S256400/800/160CT(L)
256MBit Synchronous DRAM
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70
°
C
Storage temperature range......................................................................................
– 55 to + 150
°
C
Input/output voltage.............................................................................................– 0.3 to Vdd+0.3 V
Power supply voltage V
DD
/ V
DDQ
............................................................................– 0.3 to + 4.6 V
Power Dissipation............................................. ..........................................................................1 W
Data out current (short circuit) ................................................................................................ 50 mA
Note:
Stresses above those listed under
“
Absolute Maximum Ratings
”
may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
Recommended Operation and Characteristics:
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD,
V
DDQ
= 3.3 V
±
0.3 V
Notes:
1. All voltages are referenced to VSS.
2. Vih may overshoot to Vdd + 2.0 V for pulse width of < 4ns with 3.3V. Vil may undershoot to
-2.0 V for pulse width < 4.0 ns with 3.3V. Pulse width measured at 50% points with amplitude measured peak
to DC reference.
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Limit Values
Unit Notes
min.
max.
Input high voltage
V
I
H
V
I
L
V
OH
V
OL
I
I
(L)
2.0
Vdd+0.3
V
1, 2
Input low voltage
Output high voltage (
I
OUT
= – 4.0 mA)
Output low voltage (
I
OUT
= 4.0 mA)
Input leakage current, any input
(0 V <
V
I
N
< Vddq, all other inputs = 0 V)
Output leakage current
(DQ is disabled, 0 V <
V
OUT
<
V
dd
)
– 0.3
0.8
V
1, 2
2.4
–
V
3
–
0.4
V
μ
A
3
– 5
5
I
O(L)
– 5
5
μ
A
Parameter
Symbol
Values
Unit
min.
max.
Input capacitance
(CLK)
C
I
1
C
I
2
2.5
3.5
pF
Input capacitance
(A0-A12, BA0,BA1,RAS, CAS, WE, CS, CKE, DQM)
2.5
3.8
pF
Input / Output capacitance
(DQ)
C
I
O
4.0
6.0
pF
相關(guān)PDF資料
PDF描述
HYB 39S256800CT 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動態(tài)RAM)
HYB 39S256160CT 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動態(tài)RAM)
HYB 39S64160AT 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M位(4M x 16)同步動態(tài)RAM（用于高速圖形場合）)
HYB 39S64160BT 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M位(4列 × 1M位 × 16)同步動態(tài)RAM（用于高速圖形場合）)
HYB 39S64400BT 64MBit Synchronous DRAM(64M位(4列 × 4M位 × 4)同步動態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB39S256400CT-7.5 制造商:Infineon Technologies AG 功能描述:64M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
HYB39S256400CT-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
HYB39S256400CT-8A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
HYB39S256400CTL-7.5 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
HYB39S256400CTL-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x4 SDRAM
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*