參數(shù)資料
型號(hào): HY64UD16322A-E
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
中文描述: 2M X 16 PSEUDO STATIC RAM, 70 ns, BGA48
封裝: 6 X 8 MM, FBGA-48
文件頁數(shù): 10/11頁
文件大?。?/td> 269K
代理商: HY64UD16322A-E
HY64UD16322A Series
10
Revision 1.1
May. 2003
NOTE.
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
PACKAGE DIMENSION
48ball Fine Pitch Ball Grid Array Package(F)
3. DIMENSION “D” IS MEASURED AT THE MAXIMUM SOLDER
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
unit : mm
A
A
B
B
B1
C
C
C1
D
D
E
E
E1
E2
R
R
Symbol
-
-
.90
-
-
.90
5
5
-
-
7
7
0.
0.
3
3
0
0
-
-
-
-
0.20
-
-
Min.
0.75
6
6
.00
3.75
8
8
.00
5.25
0.
0.
3
3
5
5
1.00
0.75
0.25
-
-
Typ.
-
-
.10
-
-
.10
6
6
-
-
8
8
0.
0.
4
4
0
0
1.10
-
-
0.30
0.08
Max.
B
B
C
C
TOP VIEW
A1 CORNER
INDEX AREA
E
E
E2
SIDE VIEW
C
C
A
A
5
5
R
R
D(DIAMETER)
3
3
E1
SEATING PLANE
4
4
A
A
B1
C1
BOTTOM VIEW
A
A
B
B
C
C
D
D
E
E
F
F
G
G
H
H
6
6
5
5
4
4
3
3
2
2
1
1
A
A
C/2
B/2
A1 INDEX
MARK
相關(guān)PDF資料
PDF描述
HY64UD16322A-I 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY86-12 90 Degree Hybrid 0.82-0.90 GHz
HY92-12 90 Degree Hybrid 0.88-0.96 GHz
HYB18H1G321AF GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM
HYB18H256321BF 256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY64UD16322A-I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322M 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322M-DF70E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
HY64UD16322M-DF70I 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2M x 16 bit Low Low Power 1T/1C Pseudo SRAM
HY64UD16322M-DF85E 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC