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參數(shù)資料
| 型號(hào)： | HY64LD16162M-DF85E |
| 英文描述： | PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC |
| 中文描述： | 偽靜態(tài)內(nèi)存| 1MX16 |的CMOS | BGA封裝| 48PIN |塑料 |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 348K |
| 代理商： | HY64LD16162M-DF85E |
HY64LD16162M Series
4
Revision 1.7
March. 2002
Note 1. VIL=-1.5V for pulse width less than 10ns
Undershoot is sampled, not 100% tested.
RECOMMENDED DC OPERATING CONDITION
Symbol
Vdd
V
SS
V
IH
V
IL
Parameter
Min.
2.3
0
2.0
-0.3
1
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Unit
V
V
V
V
Typ.
2.5
-
-
-
Max.
2.7
0
Vdd+0.3
0.6
DC ELECTRICAL CHARACTERISTICS
Vdd=2.3~2.7V, T
A
= -25
°
C to 85
°
C(E) / -240
°
C to 85
°
C(I)
Sym.
Parameter
I
LI
Input Leakage Current
Min.
-1
Unit
μ
A
Typ.
-
Max.
1
Test Condition
V
SS
≤
V
IN
≤
Vdd
V
SS
≤
V
OUT
≤
Vdd,
/CS1=V
IH
, CS2=V
IH
,
/OE=V
IH
or /WE=V
IL
I
LO
Output Leakage Current
-1
μ
A
-
1
I
CC
Operating Power Supply Current
-
mA
-
3
/CS1=V
IL
, CS2=V
IH
,
V
IN
=V
IH
or V
IL
, I
I/O
=0mA
I
CC1
Average Operating Current
-
mA
-
20
/CS1=V
IL
, CS2=V
IH
,
V
IN
=V
IH
or V
IL
, Cycle Time=Min.
100% Duty, I
I/O
=0mA
/CS1,CS2=V
IH
or /UB,/LB= V
IH
/CS1, CS2
≥
Vdd
-
0.2V
or /UB,/LB
≥
Vdd
-
0.2V
CS2
≤
V
SS+
0.2V
-
mA
-
5
/CS1
≤
0.2V, CS2
≥
Vdd-0.2V,
V
IN
≤
0.2V or V
IN
≥
Vdd-0.2V,
Cycle Time=1
μ
s
.
100% Duty, I
I/O
=0mA
I
SB
TTL Standby Current
-
mA
-
0.5
I
SB1
Standby Current(CMOS Input)
-
μ
A
μ
A
-
75
V
OL
V
OH
Output Low Voltage
Output High Voltage
-
V
V
-
-
0.4
-
I
OL
=0.5mA
I
OH
=-0.5mA
2.0
I
CC2
I
DPD
Deep Power Down Current
-
-
2
CAPACITANCE
(Temp = 25
°
C, f=1.0MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance(Add, /CS1, CS2, /WE, /OE, /UB, /LB)
Output Capacitance(I/O)
Unit
pF
pF
Max.
8
10
Condition
V
IN
=0V
V
I/O
=0V
Note : These parameters are sampled and not 100% tested
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| HY64LD16162M-DF85I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|1MX16|CMOS|BGA|48PIN|PLASTIC |
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| HY64LD16322M-DF85E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC |
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