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參數(shù)資料
| 型號： | HY62UF16804B-DFI |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Kx16bit full CMOS SRAM |
| 中文描述： | 512Kx16bit充分的CMOS的SRAM |
| 文件頁數(shù)： | 9/10頁 |
| 文件大?。?/td> | 197K |
| 代理商： | HY62UF16804B-DFI |
HY62UF16804B
PACKAGE INFORMATION
48ball Fine Pitch Ball Grid Array Package (F)
BOTTOM VIEW
B
A
Rev.01/Mar. 2002
8
TOP VIEW
A1 CORNER
INDEX AREA
6
5
4
3
2
1
A
A
B
C
D
C
C1
E
F
G
C1/2
H
B1/2
B1
SIDE VIEW
5
E1
E2
C
E
SEATING PLANE
4
A
r
3 D(DIAMETER)
Symbol
A
B
B1
C
C1
D
E
E1
E2
r
Min.
-
-
5.9
-
8.4
0.3
0.9
-
0.20
-
Typ.
0.75
3.75
6.0
5.25
8.5
0.35
1.0
0.76
0.25
-
Max.
-
-
6.1
-
8.6
0.4
1.10
-
0.30
0.08
Note
1. DIMENSIONING AND TOLERANCING PER ASME Y14. 5M-1994.
2. ALL DIMENSIONS ARE MILLIMETERS.
3. DIMENSION “D” IS MEASURED AT THE MAXIMUM SOLDER
BALL DIAMETER IN A PLANE PARALLEL TO DATUM C.
4. PRIMARY DATUM C(SEATING PLANE) IS DEFINED BY THE
CROWN OF THE SOLDER BALLS.
5. THIS IS A CONTROLLING DIMENSION.
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| HY62V8200B | HY62V8200B Series 256Kx8bit CMOS SRAM |
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| HY62V8200BLLR1-E | HY62V8200B Series 256Kx8bit CMOS SRAM |
| HY62V8200BLLR1-I | HY62V8200B Series 256Kx8bit CMOS SRAM |
| HY62V8200BLLSR | HY62V8200B Series 256Kx8bit CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62UF16806A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|3V|55/70/85|Super Low Power Slow SRAM - 8M |
| HY62UF16806A-C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx16bit full CMOS SRAM |
| HY62UF16806A-DMC | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx16bit full CMOS SRAM |
| HY62UF16806A-DMI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx16bit full CMOS SRAM |
| HY62UF16806A-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx16bit full CMOS SRAM |
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