- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385431 > HY62UF08401C (Hynix Semiconductor Inc.) High Speed, Super Low Power and 4Mbit Full CMOS SRAM PDF資料下載
參數(shù)資料
| 型號： | HY62UF08401C |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| 中文描述： | 高速，超低功耗和4Mbit全CMOS SRAM的 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 152K |
| 代理商： | HY62UF08401C |
HY62UF08401C Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Vcc
Supply Voltage
2.7
Vss
Ground
0
V
IH
Input High Voltage
2.2
V
IL
Input Low Voltage
-0.3
1.
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
T
A
= -40
°
C to 85
°
C
Sym
Parameter
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
Vss < V
OUT
< Vcc,
/CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
/CS = V
IL
,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
/CS = V
IL,
V
IN
= V
IH
or V
IL,
Cycle Time = Min,
100% Duty, I
I/O =
0mA
I
CC1
Average Operating Current
/CS < 0.2V
,
V
IN
< 0.2V or V
IN
> Vcc-0.2V
,
Cycle Time = 1us,
100% Duty, I
I/O =
0mA
I
SB
Standby Current
(TTL Input)
/CS = V
IH
or V
IN
= V
IH
or V
IL
/CS > Vcc - 0.2V or
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
V
OL
Output Low
I
OL
= 2.1mA
V
OH
Output High
I
OH =
-1.0mA
Note
1. Typical values are at Vcc = 3.0V T
A
= 25
°
C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25
°
C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance (Add, /CS, /WE, /OE)
C
OUT
Output Capacitance (I/O)
Note : These parameters are sampled and not 100% tested
Rev.02 / Jun.01
3
Typ
3.0
0
-
-
Max.
3.3
0
Vcc+0.3
0.6
Unit
V
V
V
V
Test Condition
Min Typ
1.
-1
-1
Max
1
1
Unit
uA
uA
-
-
I
LO
Output Leakage Current
Icc
Operating Power Supply Current
5
mA
40
mA
5
mA
0.5
6
15
mA
uA
uA
SL
LL
0.2
0.2
I
SB1
Standby Current
(CMOS Input)
-
-
-
0.4
-
V
V
2.4
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62UF08401C-DS(I) | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-I | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-SS(I) | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF16101C | 64Kx16bit full CMOS SRAM |
| HY62UF16101CLLF | 64Kx16bit full CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62UF08401C-DS(I) | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-DS55I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| HY62UF08401C-DS70I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| HY62UF08401C-DSI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。