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參數(shù)資料
| 型號(hào)： | HY62UF08401C-SS(I) |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| 中文描述： | 高速，超低功耗和4Mbit全CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 152K |
| 代理商： | HY62UF08401C-SS(I) |
HY62UF08401C Series
Notes:
1. A write occurs during the overlap of a low /WE and a low /CS.
2. tWR is measured from the earlier of /CS or /WE going high to the end of write cycle.
3. During this period, I/O pins are in the output state so that the input signals of opposite phase to the
output must not be applied.
4. If the /CS low transition occurs simultaneously with the /WE low transition or after the
/WE transition, outputs remain in a high impedance state.
5. Q(data out) is the same phase with the write data of this write cycle.
6. Q(data out) is the read data of the next address.
7. Transition is measured + 200mV from steady state.
This parameter is sampled and not 100% tested.
8. /CS in high for the standby, low for active
DATA RETENTION ELECTRIC CHARACTERISTIC
T
A
= -40
°
C to 85
°
C
Symbol
Parameter
Test Condition
/CS > Vcc - 0.2V,
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
Vcc=1.5V,
/CS > Vcc - 0.2V or
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
Chip Deselect to Data
Retention Time
tR
Operating Recovery Time
Notes:
1. Typical values are under the condition of T
A
= 25
°
C.
2. Typical value are sampled and not 100% tested
DATA RETENTION TIMING DIAGRAM
VCC
DATA RETENTION MODE
Rev.02 / Jun.01
7
Min
1.2
Typ
1.
-
Max
3.3
Unit
V
V
DR
Vcc for Data Retention
SL
-
0.1
3
uA
Iccdr
Data Retention Current
LL
-
0.1
10
uA
tCDR
0
-
-
ns
See Data Retention Timing Diagram
tRC
-
-
ns
/CS
VDR
/CS >VCC-0.2V
tCDR
tR
VSS
2.7V
VIH
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PDF描述 |
|---|---|
| HY62UF16101C | 64Kx16bit full CMOS SRAM |
| HY62UF16101CLLF | 64Kx16bit full CMOS SRAM |
| HY62UF16101CLLF-I | 64Kx16bit full CMOS SRAM |
| HY62UF16101CSLF | 64Kx16bit full CMOS SRAM |
| HY62UF16101CSLF-I | 64Kx16bit full CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62UF16101C | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:64Kx16bit full CMOS SRAM |
| HY62UF16101CLLF | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:64Kx16bit full CMOS SRAM |
| HY62UF16101CLLF-I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:64Kx16bit full CMOS SRAM |
| HY62UF16101CSLF | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:64Kx16bit full CMOS SRAM |
| HY62UF16101CSLF-I | 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:64Kx16bit full CMOS SRAM |
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