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參數(shù)資料
| 型號(hào)： | HY62U8400ALLT2 |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Kx8bit CMOS SRAM |
| 中文描述： | 512Kx8bit CMOS SRAM的 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 180K |
| 代理商： | HY62U8400ALLT2 |
HY62U8400A Series
RECOMMENDED DC OPERATING CONDITION
T
A
= 0
é
to 70
é
(Normal)/-25
°
C to 85
°
C (Extended) /-40
°
C to 85
°
C (Industrial), unless otherwise specified.
Symbol
Parameter
Min.
Typ.
Vcc
Supply Voltage
2.7
3.0
Vss
Ground
0
0
V
IH
Input High Voltage
2.2
-
V
IL
Input Low Voltage
-0.3
(1)
-
Note :
1. V
IL
= -1.5V for pulse width less than 30ns and not 100% tested.
DC ELECTRICAL CHARACTERISTICS
T
A
= 0
é
to 70
é
(Normal)/-25
°
C to 85
°
C (Extended) /-40
°
C to 85
°
C (Industrial), unless otherwise specified.
Symbol
Parameter
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
I
LO
Output Leakage Current
Vss < V
OUT
< Vcc, /CS = V
IH
or
/
OE
=
V
IH
or /WE = V
IL
Icc
Operating Power Supply
Current
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
CC1
Average Operating Current
/CS = V
IL
Min Duty Cycle = 100%,
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
I
SB
TTL Standby Current
(TTL Input)
V
IN
= V
IH
or V
IL
I
SB1
/CS > Vcc - 0.2V,
(CMOS Input)
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
V
OL
Output Low Voltage
I
OL
= 2.1mA
V
OH
Output High Voltage
I
OH =
-1mA
Note : Typical values are at Vcc = 3.0V, T
A
= 25
°
C
CAPACITANCE
Temp = 25
°
C, f= 1.0MHz
Symbol
Parameter
Condition
C
IN
Input Capacitance
V
IN
= 0V
C
OUT
Output Capacitance
V
I/O
= 0V
Note : This parameter is sampled and not 100% tested
Rev 07 / Apr. 2001
3
Max.
3.3
0
Vcc+0.3
0.4
Unit
V
V
V
V
Test Condition
Min
-1
-1
Typ
-
-
Max Unit
1
1
uA
uA
/CS = V
IL
,
-
5
mA
-
35
mA
/CS = V
IH
-
0.5
mA
LL
LL-E/I
-
-
-
-
20
30
uA
uA
Standby Current
-
-
-
0.4
-
V
V
2.2
Max.
6
8
Unit
pF
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62U8400ALLT2-E | 512Kx8bit CMOS SRAM |
| HY62U8400ALLT2-I | 512Kx8bit CMOS SRAM |
| HY62UF08401C | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-DS(I) | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-I | High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62U8400ALLT2-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit CMOS SRAM |
| HY62U8400ALLT2-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit CMOS SRAM |
| HY62UF08401C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-DS(I) | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:High Speed, Super Low Power and 4Mbit Full CMOS SRAM |
| HY62UF08401C-DS55I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
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