參數(shù)資料
型號(hào): HY62SF16201A
廠商: Hynix Semiconductor Inc.
英文描述: 128Kx16bit full CMOS SRAM
中文描述: 128Kx16bit充分的CMOS的SRAM
文件頁(yè)數(shù): 8/10頁(yè)
文件大?。?/td> 166K
代理商: HY62SF16201A
HY62SF16201A
DATA RETENTION ELECTRIC CHARACTERISTIC
T
A
= 0
°
C to 70
°
C /-40
°
C to 85
°
C (I)
Symbol
Parameter
Test Condition
V
DR
Vcc for Data Retention
/CS > Vcc - 0.2V or
/UB = /LB > Vcc-0.2V,
V
IN
> Vcc - 0.2V or V
IN
< Vss + 0.2V
I
CCDR
Data Retention Current
Vcc=1.5V, /CS > Vcc - 0.2V or
/UB = /LB > Vcc-0.2V,
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
tCDR
Chip Deselect to Data
Retention Time
tR
Operating Recovery Time
Notes:
1. Typical values are under the condition of T
A
= 25
°
C.
2. Typical Values are sampled and not 100% tested
3. tRC is read cycle time.
DATA RETENTION TIMING DIAGRAM
VCC
DATA RETENTION MODE
Rev.06 /Mar. 2002
7
Min.
1.2
Typ.
-
Max.
2.3
Unit
V
LL
-
-
3
uA
SL
-
0
-
-
1
-
uA
ns
See Data Retention Timing Diagram
tRC
(3)
-
-
ns
CS
or /UB &/LB
VDR
CS > VCC-0.2V
or /UB = /LB > Vcc – 0.2V
tCDR
tR
VSS
1.7V
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