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參數(shù)資料
| 型號： | HY62KF08802B |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| 中文描述： | 1M × 8位2.7?3.6V的超低功耗FCMOS慢的SRAM |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 142K |
| 代理商： | HY62KF08802B |
HY62KF08802B Series
AC CHARACTERISTICS
T
A
= -40
°
C to 85
°
C, unless otherwise specified
Rev.00 / Jan.02
4
55ns
70ns
#
Symbol
Parameter
Min.
Max.
Min.
Max.
Unit
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselection to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
55
-
-
-
10
5
0
0
10
-
70
-
-
-
10
5
0
0
10
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
30
-
-
20
20
-
70
70
35
-
-
25
25
-
10
11
12
13
14
15
16
17
18
19
AC TEST CONDITIONS
T
A
= -40
°
C to 85
°
C, unless otherwise specified
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
55
50
50
0
45
0
0
25
0
5
-
-
-
-
-
-
70
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
-
-
-
20
-
-
-
Parameter
Value
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
tCLZ, tOLZ, tCHZ, tOHZ, tWHZ, tOW
Output Load
Others
AC TEST LOADS
0.4V to 2.2V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
Note
1. Including jig and scope capacitance
D
OUT
1728 Ohm
CL(1)
1029 Ohm
V
TM
=2.8V
READ CYCLE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62KF08802B-DD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62LF16206A | 128Kx16bit full CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62KF08802B-DD | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DDI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SD | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SDI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF16403E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
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