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參數(shù)資料
| 型號(hào)： | HY62KF08802B-SD |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| 中文描述： | 1M × 8位2.7?3.6V的超低功耗FCMOS慢的SRAM |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | HY62KF08802B-SD |
HY62KF08802B Series
TIMING DIAGRAM
READ CYCLE 1 (Note 1,4)
READ CYCLE 2 (Note 1,2,4)
tRC
Rev.00 / Jan.02
5
tAA
Data Valid
Previous Data
tOH
tOH
ADDR
Data
Out
READ CYCLE 3 (Note 1,2,4)
/CS1
tACS
Data Valid
tCLZ(3)
tCHZ(3)
Data
Out
Notes:
1. Read Cycle occurs whenever a high on the /WE and /OE is low, while /CS1 and CS2 are in active status.
2. /OE = V
IL
3. Transition is measured + 200mV from steady state voltage.
This parameter is sampled and not 100% tested.
4. /CS1 in high for the standby, low for active
CS2 in low for the standby, high for active.
CS2
Data Valid
High-Z
ADDR
Data
Out
tRC
/CS1
CS2
/OE
tAA
tACS
tOE
tCLZ
(3)
tOLZ
(3)
tOH
tCHZ
(3)
tOHZ
(3)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62KF08802B-SDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62KF08802B-SDI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF16403E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KT08081E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62KT08081E-DG10C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 SRAM |
| HY62KT08081E-DG10E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 SRAM |
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