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參數(shù)資料
| 型號： | HY62KF08802B-DDI |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| 中文描述： | 1M × 8位2.7?3.6V的超低功耗FCMOS慢的SRAM |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 142K |
| 代理商： | HY62KF08802B-DDI |
HY62KF08802B Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Parameter
Min.
Vcc
Supply Voltage
2.7
Vss
Ground
0
V
IH
Input High Voltage
2.2
V
IL
Input Low Voltage
-0.3
1.
Note : 1. Undershoot : VIL = -1.5V for pulse width less than 30ns
2. Undershoot is sampled, not 100% tested.
DC ELECTRICAL CHARACTERISTICS
T
A
= -40
°
C to 85
°
C
Sym
Parameter
I
LI
Input Leakage Current
Vss < V
IN
< Vcc
Vss < V
OUT
< Vcc, /CS1 = V
IH
or
CS2 = V
IL
or
/
OE
=
V
IH
or /WE = V
IL
/CS1 = V
IL
, CS2 = V
IH
V
IN
= V
IH
or V
IL,
I
I/O =
0mA
/CS1 = V
IL,
CS2 = V
IH
V
IN
= V
IH
or V
IL,
Cycle
Time = Min,
100% Duty, I
I/O =
0mA
I
CC1
Average Operating Current
/CS1 < 0.2V
,
CS2
> Vcc-0.2V
V
IN
< 0.2V or V
IN
> Vcc-0.2V
,
Cycle Time = 1us,
100% Duty, I
I/O =
0mA
/CS1 = V
IH,
CS2 = V
IL
V
IN
= V
IH
or V
IL
/CS1 > Vcc - 0.2V,
CS2 < Vss + 0.2V
,
V
IN
> Vcc - 0.2V or
V
IN
< Vss + 0.2V
V
OL
Output Low
I
OL
= 2.1mA
V
OH
Output High
I
OH =
-1.0mA
Note
1. Typical values are at Vcc = 3.0V T
A
= 25
°
C
2. Typical values are not 100% tested
CAPACITANCE
(Temp = 25
°
C, f= 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance (Add, /CS1,CS2, /WE, /OE)
C
OUT
Output Capacitance (I/O)
Note : These parameters are sampled and not 100% tested
Rev.00 / Jan.02
3
Typ
Max.
3.6
0
Vcc+0.3
0.6
Unit
V
V
V
V
3.0 or 3.3
0
-
-
Test Condition
Min Typ
1.
-1
Max
1
Unit
uA
-
I
LO
Output Leakage Current
-1
-
1
uA
Icc
Operating Power Supply Current
4
mA
55ns
70ns
55ns
70ns
25
20
20
15
mA
mA
mA
mA
3.0~
3.6V
2.7~
3.3V
3
mA
I
SB
Standby Current
(TTL Input)
300
uA
SL
LL
SL
LL
0.2
0.2
0.2
0.2
-
-
12
30
12
25
0.4
-
uA
uA
uA
uA
V
V
3.0~
3.6V
2.7~
3.3V
I
SB1
Standby Current
(CMOS Input)
-
2.4
Condition
V
IN
= 0V
V
I/O
= 0V
Max.
8
10
Unit
pF
pF
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62KF08802B-SD | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SDI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF16403E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KT08081E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62KT08081E-DG10C | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:x8 SRAM |
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