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參數(shù)資料
| 型號(hào)： | HY62KF08802B-DD |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| 中文描述： | 1M × 8位2.7?3.6V的超低功耗FCMOS慢的SRAM |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 142K |
| 代理商： | HY62KF08802B-DD |
HY62KF08802B Series
DESCRIPTION
The HY62KF08802B is a high speed, super low
power and 8Mbit full CMOS SRAM organized as
1M words by 8bits. The HY62KF08802B uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
Rev.00 / Jan.02
2
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Battery backup
-. 1.2V(min) data retention
Standard pin configuration
-. 44pin 400mil TSOP-II (Forward)
Standby
Current(uA)
SL
12
Product No.
Voltage
(V)
Speed (ns)
Operation
Current/Icc(mA)
LL
30
Temperature
(
°
C)
HY62KF08802B-I
Note 1. I : Industrial
2. Current value is max.
PIN CONNECTION
BLOCK DIAGRAM
PIN DESCRIPTION
Pin Name
Pin Function
/CS1, CS2
Chip Select
/WE
Write Enable
/OE
Output Enable
I/O1~I/O8
Data Inputs/Outputs
2.7~3.6
55/70
2
-40~85
Pin Name
A0~A19
Vcc
Vss
NC
Pin Function
Address Inputs
Power (2.7~3.6V)
Ground
No Connection
A5
A6
/OE
CS2
A8
NC
NC
I/O8
I/O7
Vss
Vcc
I/O6
I/O5
NC
NC
A9
A10
A11
A12
A13
A14
A7
A4
A3
A2
A1
A0
/CS1
NC
NC
I/O1
I/O2
Vcc
Vss
I/O3
I/O4
NC
NC
/WE
A19
A18
A16
A15
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOPII
(Forward)
MEMORY ARRAY
1M x 8
ROW
DECODER
S
W
D
B
I/O1
I/O8
C
D
B
D
P
A
B
A0
A19
/CS1
CS2
/OE
/WE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62KF08802B-DDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62LF16206A | 128Kx16bit full CMOS SRAM |
| HY62SF16101CLLF-I | HY62SF16101C Series 64Kx16bit full CMOS SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62KF08802B-DDI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SD | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-SDI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF16403E | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KT08081E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
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