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參數(shù)資料
| 型號： | HY62CT08081E-DTI |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 32Kx8bit CMOS SRAM |
| 中文描述： | 32Kx8bit CMOS SRAM的 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 186K |
| 代理商： | HY62CT08081E-DTI |
HY62CT08081E Series
AC CHARACTERISTICS
Vcc = 5V
±
10%, T
A
= 0
°
C to 70
°
C (Normal) / -25
°
C to 85
°
C (Extended) / -40
°
C to 85
°
C (Industrial)
unless otherwise specified.
Symbol
Parameter
#
Rev 04 / Apr. 2001
4
-55
-70
-85
Min.
Max.
Min.
Max.
Min
Max.
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
55
-
-
-
10
5
0
0
5
-
70
-
-
-
10
5
0
0
5
-
85
-
-
-
10
5
0
0
5
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
25
-
-
20
20
-
70
70
35
-
-
30
30
-
85
85
45
-
-
30
30
-
10
11
12
13
14
15
16
17
18
19
AC TEST CONDITIONS
T
A
= 0
°
C to 70
°
C (Normal) / -25
°
C to 85
°
C (Extended) / -40
°
C to 85
°
C (Industrial)
unless otherwise specified.
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW
Others
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
55
45
45
0
40
0
0
25
0
5
-
-
-
-
-
-
70
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
85
75
75
0
60
0
0
40
0
5
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
-
-
-
25
-
-
-
30
-
-
-
Value
0.8V to 2.4V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
READ CYCLE
Unit
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62CT08081E-E | 32Kx8bit CMOS SRAM |
| HY62CT08081E-I | 32Kx8bit CMOS SRAM |
| HY62KF08802B | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DDI | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62CT08081E-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62CT08081E-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62KF08401C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KF08401C-DI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
| HY62KF08401C-DS | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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