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參數(shù)資料
| 型號(hào)： | HY62CT08081E-DTE |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 32Kx8bit CMOS SRAM |
| 中文描述： | 32Kx8bit CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 186K |
| 代理商： | HY62CT08081E-DTE |
HY62CT08081E Series
DESCRIPTION
The HY62CT08081E is a high-speed, low power
and 32,786 X 8-bits CMOS Static Random
Access Memory fabricated using Hynix's high
performance CMOS process technology. It is
suitable for use in low voltage operation and
battery back-up application. This device has a
data retention mode that guarantees data to
remain valid at the minimum power supply
voltage of 2.0 volt.
Product
Voltage
Speed
Operation
No.
(V)
(ns)
Current(mA)
HY62CT08081E-C
5.0
55/70/85
10
HY62CT08081E-E
5.0
55/70/85
10
HY62CT08081E-I
5.0
55/70/85
10
Note 1. Current value is max.
PIN CONNECTION
Rev 04 / Apr. 2001
2
FEATURES
Fully static operation and Tri-state output
TTL compatible inputs and outputs
Low power consumption
Battery backup
- 2.0V(min.) data retention
Standard pin configuration
- 28 pin 600mil PDIP
- 28 pin 330mil SOP
- 28 pin 8x13.4 mm TSOP-I
(Standard)
Standby Current(uA)
LL
10
20
20
Temperature
(
°
C)
0~70(Normal)
-25~85(Extended)
-40~85(Industrial)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
24
23
22
21
20
19
18
17
16
15
Vcc
/WE
A8
A9
A11
/OE
A10
/CS
I/O8
I/O7
I/O6
I/O5
I/O4
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
Vss
1
2
3
4
5
6
7
8
9
10
28
Vcc
A13
A8
A9
A14
A7
A6
A2
IVss
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
I/O8
I/O7
/A9
Vcc
A7
A6
PDIP SOP TSOP-I(Standard)
PIN DESCRIPTION BLOCK DIAGRAM
Pin Name
Pin Function
/CS
Chip Select
/WE
Write Enable
/OE
Output Enable
A0 ~ A14
Address Inputs
I/O1 ~ I/O8
Data Input/Output
Vcc
Power(
+
5.0V)
Vss
Ground
A14
C
A0
ROW DECODER
MEMORY ARRAY
512x512
S
O
I/O1
I/O8
A
/CS
/OE
/WE
W
C
L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY62CT08081E-DTI | 32Kx8bit CMOS SRAM |
| HY62CT08081E-E | 32Kx8bit CMOS SRAM |
| HY62CT08081E-I | 32Kx8bit CMOS SRAM |
| HY62KF08802B | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
| HY62KF08802B-DD | 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY62CT08081E-DTI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62CT08081E-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62CT08081E-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32Kx8bit CMOS SRAM |
| HY62KF08401C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8|2.7~3.6V|55/70|Super Low Power Slow SRAM - 4M |
| HY62KF08401C-DI | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Kx8bit full CMOS SRAM |
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