參數(shù)資料
型號: HY628400ALT2-I
廠商: Hynix Semiconductor Inc.
英文描述: 512K x8 bit 5.0V Low Power CMOS slow SRAM
中文描述: 為512k x8位5.0V低功耗CMOS SRAM的速度
文件頁數(shù): 5/11頁
文件大小: 182K
代理商: HY628400ALT2-I
HY628400A Series
AC CHARACTERISTICS
T
A
= 0
é
to 70
é
(Normal)/-25
°
C to 85
°
C (Extended) /-40
°
C to 85
°
C (Industrial), unless otherwise specified.
Symbol
Parameter
#
Rev 07 / Apr. 2001
4
55ns
70ns
85ns
Min.
Max.
Min.
Max.
Min
Max.
1
2
3
4
5
6
7
8
9
tRC
tAA
tACS
tOE
tCLZ
tOLZ
tCHZ
tOHZ
tOH
WRITE CYCLE
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Select to Output in Low Z
Output Enable to Output in Low Z
Chip Deselecting to Output in High Z
Out Disable to Output in High Z
Output Hold from Address Change
55
-
-
-
10
5
0
0
10
-
70
-
-
-
10
5
0
0
10
-
85
-
-
-
10
5
0
0
10
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
25
-
-
20
20
-
70
70
40
-
-
25
25
-
85
85
45
-
-
30
30
-
10
11
12
13
14
15
16
17
18
19
AC TEST CONDITIONS
T
A
= 0
é
to 70
é
(Normal)/-25
°
C to 85
°
C (Extended) /-40
°
C to 85
°
C (Industrial), unless otherwise specified.
Parameter
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Level
Output Load
tCLZ,tOLZ,tCHZ,tOHZ,tWHZ
Others
AC TEST LOADS
tWC
tCW
tAW
tAS
tWP
tWR
tWHZ
tDW
tDH
tOW
Write Cycle Time
Chip Selection to End of Write
Address Valid to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Write to Output in High Z
Data to Write Time Overlap
Data Hold from Write Time
Output Active from End of Write
55
45
45
0
40
0
0
25
0
5
-
-
-
-
-
-
70
60
60
0
50
0
0
30
0
5
-
-
-
-
-
-
85
70
70
0
55
0
0
40
0
5
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
20
-
-
-
25
-
-
-
30
-
-
-
Value
0.8V to 2.4V
5ns
1.5V
CL = 5pF + 1TTL Load
CL = 100pF + 1TTL Load
Note
1. Including jig and scope capacitance
CL(1)
TTL
READ CYCLE
Unit
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