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參數(shù)資料
| 型號(hào)： | HY628100B |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| 中文描述： | 128K的x8位5.0V低功耗CMOS SRAM的速度 |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大?。?/td> | 175K |
| 代理商： | HY628100B |
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev 12 / Apr.2001 Hynix Semiconductor
HY628100B Series
128Kx8bit CMOS SRAM
Document Title
128K x8 bit 5.0V Low Power CMOS slow SRAM
Revision History
Revision No History Draft Date Remark
10 Initial Revision History Insert Jul.14.2000 Final
11 Marking Information Add Dec.04.2000 Final
Revised
-
E.T (-25~85
°
C), I.T (-40~85
°
C) Part Insert
-
AC Test Condition Add : 5pF Test Load
12 Changed Logo Apr.30.2001 Final
-
HYUNDAI -> hynix
-
Marking Information Change
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY628100B-E | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100B-I | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLLG | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLT1 | 128K x8 bit 5.0V Low Power CMOS slow SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY628100B-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100B-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG-E | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
| HY628100BLG-I | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128K x8 bit 5.0V Low Power CMOS slow SRAM |
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