參數(shù)資料
型號(hào): HY5W26CF-B
英文描述: x16 SDRAM
中文描述: x16內(nèi)存
文件頁(yè)數(shù): 6/24頁(yè)
文件大?。?/td> 221K
代理商: HY5W26CF-B
HY5W2A6C(L/S)F / HY57W2A1620HC(L/S)T
HY5W26CF / HY57W281620HCT
Rev. 1.2 / Nov. 01
7
BASIC FUNCTIONAL DESCRIPTION (Continued)
Extended Mode Register
TCSR
(Temperature Compensated Self Refresh)
PASR
(Partial Array Self Refresh)
BA1
BA0
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
1
0
0
0
0
0
0
0
0
0
TCSR
PASR
A4 A3
Temperature
o
C
0 0
70
45
15
85
0 1
1 0
1 1
A2 A1 A0
Self Refresh Coverage
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
All Banks
Half of Total Bank (BA1=0)
Quarter of Total Bank (BA1=BA0=0)
Reserved
Reserved
One Eighth of Total Bank (Row Address MSB=0)
One Sixteenth of Total Bank (Row Address 2 MSBs=0)
Reserved
相關(guān)PDF資料
PDF描述
HY57W281620HCT-B SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
HY57W281620HCT-H x16 SDRAM
HY57W281620HCT-P SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
HY57W281620HCT-S SDRAM|4X2MX16|CMOS|TSOP|54PIN|PLASTIC
HY57W2A1620HCLT-B x16 SDRAM
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