參數(shù)資料
型號(hào): HY5V66GF-P
英文描述: x16 SDRAM
中文描述: x16內(nèi)存
文件頁數(shù): 6/11頁
文件大小: 201K
代理商: HY5V66GF-P
Rev. 0.4/Nov. 01
7
HY5V62CF
DC CHARACTERISTICS II
(DC operating conditions unless otherwise noted)
Note :
1.I
DD1
and I
DD4
depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS I
Parameter
Symbol
Test Condition
Speed
Unit
Note
-7
-S
Operating Current
IDD1
Burst Length=1, One bank active
tRAS
tRAS(min), tRP
tRP(min),
IOL=0mA
120
115
mA
1
Precharge Standby Current
in power down mode
IDD2P
CKE
VIL(max), tCK = 15ns
2
mA
IDD2PS
CKE
VIL(max), tCK =
2
Precharge Standby Current
in non power down mode
IDD2N
CKE
VIH(min), CS
VIH(min), tCK = 15ns
Input signals are changed one time during
2clks. All other pins
VDD-0.2V or
0.2V
15
mA
IDD2NS
CKE
VIH(min), tCK =
Input signals are stable.
10
Active Standby Current
in power down mode
IDD3P
CKE
VIL(max), tCK = 15ns
3
mA
IDD3PS
CKE
VIL(max), tCK =
3
Active Standby Current
in non power down mode
IDD3N
CKE
VIH(min), CS
VIH(min), tCK = 15ns
Input signals are changed one time during
2clks. All other pins
VDD-0.2V or
0.2V
40
mA
IDD3NS
CKE
VIH(min), tCK =
Input signals are stable
25
Burst Mode Operating
Current
IDD4
tCK
tCK(min),
tRAS
tRAS(min), IOL=0mA
All banks active
CL=3
210
180
mA
1
CL=2
-
160
Auto Refresh Current
IDD5
tRRC
tRRC(min), 2 banks active
210
190
mA
2
Self Refresh Current
IDD6
CKE
0.2V
2
mA
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