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參數資料
| 型號： | HY5V26CSF-6 |
| 英文描述： | x16 SDRAM |
| 中文描述： | x16內存 |
| 文件頁數： | 13/14頁 |
| 文件大?。?/td> | 72K |
| 代理商： | HY5V26CSF-6 |
HY5V26C(L/S)F
Rev. 0.9/Oct. 01
14
COMMAND TRUTH TABLE
Note :
1. Exiting Self Refresh occurs by asynchronously bringing CKE from low to high
2. X = Don
′
t care, H = Logic High, L = Logic Low. BA =Bank Address, RA = Row Address, CA = Column Address,
Opcode = Operand Code, NOP = No Operation
3. The burst read sigle write mode is entered by programming the write burst mode bit (A9) in the mode register to a logic 1.
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
DQM
ADDR
A10/
AP
BA
Note
Mode Register Set
H
X
L
L
L
L
X
OP code
No Operation
H
X
H
X
X
X
X
X
L
H
H
H
Bank Active
H
X
L
L
H
H
X
RA
V
Read
H
X
L
H
L
H
X
CA
L
V
Read with Autoprecharge
H
Write
H
X
L
H
L
L
X
CA
L
V
Write with Autoprecharge
H
Precharge All Banks
H
X
L
L
H
L
X
X
H
X
Precharge selected Bank
L
V
Burst Stop
H
X
L
H
H
L
X
X
DQM
H
X
V
X
Auto Refresh
H
H
L
L
L
H
X
X
Burst-Read-Single-
WRITE
H
X
L
L
L
L
X
A9 ball High
(Other balls OP code)
MRS
Mode
Self Refresh
1
Entry
H
L
L
L
L
H
X
X
Exit
L
H
H
X
X
X
X
L
H
H
H
Precharge
power down
Entry
H
L
H
X
X
X
X
X
L
H
H
H
Exit
L
H
H
X
X
X
X
L
H
H
H
Clock
Suspend
Entry
H
L
H
X
X
X
X
X
L
V
V
V
Exit
L
H
X
X
相關PDF資料 |
PDF描述 |
|---|---|
| HY5V26CSF-6I | x16 SDRAM |
| HY5V26CSF-8I | x16 SDRAM |
| HY5V26CSF-H | x16 SDRAM |
| HY5V26CSF-HI | x16 SDRAM |
| HY5V26CSF-K | x16 SDRAM |
相關代理商/技術參數 |
參數描述 |
|---|---|
| HY5V26CSF-6I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY5V26CSF-8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY5V26CSF-8I | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
| HY5V26CSF-H | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:4 Banks x 2M x 16bits Synchronous DRAM |
| HY5V26CSF-HI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SDRAM |
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