參數(shù)資料
型號: HY5PS1G831F-E3
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 1Gb DDR2 SDRAM
中文描述: 128M X 8 DDR DRAM, 0.6 ns, PBGA68
封裝: FBGA-68
文件頁數(shù): 3/33頁
文件大?。?/td> 540K
代理商: HY5PS1G831F-E3
Rev. 1.2 / Dec 2006
3
1
HY5PS1G431(L)F
1
HY5PS1G831(L)F
Contents
1. Description
1.1 Device Features and Ordering Information
1.1.1 Key Feaures
1.1.2 Ordering Information
1.1.3 Ordering Frequency
1.2 Pin configuration
1.3 Pin Description
2. Maximum DC ratings
2.1 Absolute Maximum DC Ratings
2.2 Operating Temperature Condition
3. AC & DC Operating Conditions
3.1 DC Operating Conditions
5.1.1 Recommended DC Operating Conditions(SSTL_1.8)
5.1.2 ODT DC Electrical Characteristics
3.2 DC & AC Logic Input Levels
3.2.1 Input DC Logic Level
3.2.2 Input AC Logic Level
3.2.3 AC Input Test Conditions
3.2.4 Differential Input AC Logic Level
3.2.5 Differential AC output parameters
3.3 Output Buffer Levels
3.3.1 Output AC Test Conditions
3.3.2 Output DC Current Drive
3.3.3 OCD default chracteristics
3.4 IDD Specifications & Measurement Conditions
3.5 Input/Output Capacitance
4
.
AC Timing Specifications
5. Package Dimensions
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