參數(shù)資料
型號: HY5DV641622AT
廠商: Hynix Semiconductor Inc.
英文描述: 64M(4Mx16) DDR SDRAM
中文描述: 64M號(4Mx16)DDR SDRAM內(nèi)存
文件頁數(shù): 26/27頁
文件大?。?/td> 276K
代理商: HY5DV641622AT
Rev. 0.7/May. 02
26
HY5DV641622AT
CAPACITANCE
(T
A
=25
o
C, f=1MHz )
Note :
1. V
DD
= min. to max., V
DDQ
= 2.3V to 2.7V, V
O
DC = V
DDQ
/2, V
O
peak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Parameter
Pin
Symbol
Min
Max
Unit
Input Clock Capacitance
CK, CK
C
CK
2.0
3.0
pF
Input Capacitance
All other input-only pins
C
IN
2.0
3.0
pF
Input / Output Capacitanc
DQ, DQS, DM
C
IO
4.0
5.0
pF
V
REF
V
TT
V
TT
R
T
=50
R
T
=50
R
S
=25
Zo=50
C
L
=30pF
Output
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