參數(shù)資料
型號： HY5DV281622DT-36
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 128M(8Mx16) GDDR SDRAM
中文描述： 8M X 16 DDR DRAM, 0.7 ns, PDSO66
封裝： 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66
文件頁數(shù)： 22/31頁
文件大?。?/td> 294K
代理商： HY5DV281622DT-36
Rev. 0.5 / Aug. 2003
22
HY5DV281622DT
ABSOLUTE MAXIMUM RATINGS
Note :
Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. V
DDQ
must not exceed the level of V
DD
.
2. V
IL
(min) is acceptable -1.5V AC pulse width with
≤
5ns of duration.
3. V
REF
is expected to be equal to 0.5*V
DDQ
of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on V
REF
may not exceed
±
2% of the dc value.
4. Supports 300/275MHz
5. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
6. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the
entire temper ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it
represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation
in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source
voltages from 0.1 to 1.0.
7. VIN=0 to VDD, All other pins are not tested under VIN =0V. 2. DOUT is disabled, VOUT=0 to VDDQ
Parameter
Symbol
Rating
Unit
Ambient Temperature
T
A
0 ~ 70
o
C
o
C
V
V
V
mA
W
Storage Temperature
T
STG
-55 ~ 125
Voltage on Any Pin relative to V
SS
Voltage on V
DD
relative to V
SS
Voltage on V
DDQ
relative to V
SS
Output Short Circuit Current
Power Dissipation
Soldering Temperature
Time
V
IN
, V
OUT
V
DD
V
DDQ
I
OS
P
D
T
SOLDER
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
50
1
260
10
o
C
sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
Power Supply Voltage
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK
inputs
V-I Matching: Pullup to Pulldown Cur-
rent Ratio
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
DD
V
DD
V
DDQ
V
DDQ
V
IH
V
IL
V
TT
V
REF
VIN(DC)
3.15
3.15
2.375
2.375
3.3
3.3
2.5
2.5
-
-
V
REF
3.45
3.65
2.625
3.15
V
V
V
V
V
V
V
V
4
1
1,4
V
REF
+ 0.15
-0.3
V
REF
- 0.04
0.49*V
DDQ
-0.3
V
DDQ
+ 0.3
V
REF
- 0.15
V
REF
+ 0.04
0.51*V
DDQ
V
2
0.5*V
DDQ
VDDQ+0.3
3
VID(DC)
0.36
VDDQ+0.6
V
4
VI(RATIO)
0.71
1.4
-
5
I
LI
I
LO
V
OH
V
OL
-2
-5
2
5
-
uA
uA
V
V
6
V
TT
+ 0.76
-
I
OL
= -15.2mA
I
OL
= +15.2mA
V
TT
- 0.76
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