參數(shù)資料
型號: HY5DU663222Q-8
英文描述: DDR Synchronous DRAM
中文描述: DDR同步DRAM
文件頁數(shù): 13/37頁
文件大?。?/td> 336K
代理商: HY5DU663222Q-8
Rev. 0.3 / Dec. 01
13
HY5DU12422T
HY5DU12822T
HY5DU121622T
OPERATION COMMAND TRUTH TABLE-III
Current
State
/ CS
/ RAS
/ CAS
/ WE
Address
Command
Action
ROW
ACTIVATING
H
X
X
X
X
DSEL
NOP - Enter ROW ACT after tRCD
L
H
H
H
X
NOP
NOP - Enter ROW ACT after tRCD
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,9,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,10
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
RECOVERING
H
X
X
X
X
DSEL
NOP - Enter ROW ACT after tWR
L
H
H
H
X
NOP
NOP - Enter ROW ACT after tWR
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
H
X
X
X
X
DSEL
NOP - Enter precharge after tDPL
L
H
H
H
X
NOP
NOP - Enter precharge after tDPL
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,8,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
REFRESHING
H
X
X
X
X
DSEL
NOP - Enter IDLE after tRC
L
H
H
H
X
NOP
NOP - Enter IDLE after tRC
L
H
H
L
X
BST
ILLEGAL
11
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
11
相關PDF資料
PDF描述
HY5DU12422T-L SDRAM|DDR|4X32MX4|CMOS|TSSOP|66PIN|PLASTIC
HY5DU12822ALT 64Mx8|2.5V|8K|J/M/K/H/L|DDR SDRAM - 512M
HY5DU12822AT 64Mx8|2.5V|8K|J/M/K/H/L|DDR SDRAM - 512M
HY5DU12822LT-H DDR Synchronous DRAM
HY5DU12822LT-K DDR Synchronous DRAM
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