參數(shù)資料
型號(hào)： HY5DU283222AF
廠商： Hynix Semiconductor Inc.
英文描述： 128M(4Mx32) GDDR SDRAM
中文描述： 128M的（4Mx32）GDDR SDRAM內(nèi)存
文件頁(yè)數(shù)： 22/32頁(yè)
文件大小： 355K
代理商： HY5DU283222AF
Rev. 0.7 / Jun. 2004
22
HY5DU283222AF
DC CHARACTERISTICS II
(TA=0 to 70
o
C, Voltage referenced to V
SS
= 0V)
Note :
1. I
DD1, IDD4
and I
DD5
depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of t
RFC
(Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Parameter
Symbol
Test Condition
Speed
Unit
Note
2
22
25
28
33
36
4
5
Operating Current
I
DD0
One bank; Active - Precharge;
tRC=tRC(min); tCK=tCK(min);
DQ,DM and DQS inputs changing
twice per clock cycle; address and
control inputs changing once per
clock cycle
230
210
190
180
170
160
150
140
mA
1
Operating Current
I
DD1
Burst ength=4, One bank active
t
RC
≥
t
RC
(min), I
OL
=0mA
250
230
210
200
190
180
170
160
mA
1
Precharge Standby
Current in Power
Down Mode
I
DD2P
CKE
≤
V
IL
(max), t
CK
=min
45
40
35
30
25
25
25
25
mA
Precharge Standby
Current in Non
Power Down Mode
I
DD2N
CKE
≥
V
IH
(min), /CS
≥
V
IH
(min),
t
CK
= min, Input signals are
changed one time during 2clks
140
130
120
110
100
90
90
80
mA
Active Standby Cur-
rent in Power Down
Mode
I
DD3P
CKE
≤
V
IL
(max), t
CK
=min
50
45
40
35
30
30
30
30
mA
Active Standby Cur-
rent in Non Power
Down Mode
I
DD3N
CKE
≥
V
IH
(min), /CS
≥
V
IH
(min),
t
CK
=min, Input signals are
changed one time during 2clks
190
170
150
130
115
110
110
100
mA
Burst Mode Operat-
ing Current
I
DD4
t
CK
≥
t
CK
(min), I
OL
=0mA
All banks active
750
700
650
590
500
450
450
370
mA
1
Auto Refresh Current
I
DD5
t
RC
≥
t
RFC
(min),
All banks active
400
400
350
350
300
300
270
270
mA
1,2
Self Refresh Current
I
DD6
CKE
≤
0.2V
3
3
3
3
3
3
3
3
mA
Operating Current -
Four Bank Operation
I
DD7
Four bank interleaving with BL=4,
Refer to the following page for
detailed test condition
1100 1000
900
800
700
600
600
600
mA
相關(guān)PDF資料
PDF描述
HY5DU283222AF-2 128M(4Mx32) GDDR SDRAM
HY5DU283222AF-22 128M(4Mx32) GDDR SDRAM
HY5DU283222AF-25 128M(4Mx32) GDDR SDRAM
HY5DU283222AF-28 128M(4Mx32) GDDR SDRAM
HY5DU283222AF-33 128M(4Mx32) GDDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HY5DU283222AF-2 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-22 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-25 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-28 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
HY5DU283222AF-33 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:128M(4Mx32) GDDR SDRAM
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