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參數(shù)資料
| 型號： | HY5DU12822AT-X |
| 廠商： | Hynix Semiconductor Inc. |
| 英文描述： | 512Mb DDR SDRAM |
| 中文描述： | 產(chǎn)品512Mb DDR SDRAM |
| 文件頁數(shù)： | 27/33頁 |
| 文件大?。?/td> | 379K |
| 代理商： | HY5DU12822AT-X |
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Rev. 0.0/Feb. 2003 27
HY5DU12422A(L)T
HY5DU12822A(L)T
HY5DU121622A(L)T
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7
IDD1 : Operating current: One bank operation
1. Typical Case : VDD = 2.6V, T=25
o
C
2. Worst Case : VDD = 2.7V, T= 0
o
C
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are
changing once per clock cycle. lout = 0mA
4. Timing patterns
- DDR400(200Mhz, CL=3) : tCK = 5ns, CL = 2, BL = 4, tRCD = 3*tCK, tRC = 11*tCK, tRAS = 8*tCK
Read : A0 N N R0 N N N P0 N N A0 N - repeat the same timing with random add
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
IDD7 : Operating current: Four bank operation
1. Typical Case : VDD = 2.6V, T=25
o
C
2. Worst Case : VDD = 2.7V, T= 0
o
C
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- DDR400(200Mhz, CL=3) : tCK = 5ns, CL = 2, BL = 4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read : A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
Legend : A=Activate, R=Read, W=Write, P=Precharge, N=NOP
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HY5DU121622CTP | 512Mb(32Mx16) GDDR SDRAM |
| HY5DU121622CTP-4 | 512Mb(32Mx16) GDDR SDRAM |
| HY5DU121622CTP-5 | 512Mb(32Mx16) GDDR SDRAM |
| HY5DU121622CTP-6 | 512Mb(32Mx16) GDDR SDRAM |
| HY5DU12822B | CAP CERAMIC 15PF 50V NP0 0805 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HY5DU12822B | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
| HY5DU12822BLT | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
| HY5DU12822BLTP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
| HY5DU12822BLTP-X | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
| HY5DU12822BT | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM |
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