參數(shù)資料
型號(hào): HY5DU12822A
廠商: Hynix Semiconductor Inc.
英文描述: 512Mb DDR SDRAM
中文描述: 產(chǎn)品512Mb DDR SDRAM
文件頁(yè)數(shù): 13/33頁(yè)
文件大?。?/td> 379K
代理商: HY5DU12822A
Rev. 0.0/Feb. 2003 13
HY5DU12422A(L)T
HY5DU12822A(L)T
HY5DU121622A(L)T
OPERATION COMMAND TRUTH TABLE-III
Current
State
/CS
/RAS
/CAS
/WE
Address
Command
Action
ROW
ACTIVATING
H
X
X
X
X
DSEL
NOP - Enter ROW ACT after tRCD
L
H
H
H
X
NOP
NOP - Enter ROW ACT after tRCD
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,9,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,10
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
RECOVERING
H
X
X
X
X
DSEL
NOP - Enter ROW ACT after tWR
L
H
H
H
X
NOP
NOP - Enter ROW ACT after tWR
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
WRITE
RECOVERING
WITH
AUTOPRE-
CHARGE
H
X
X
X
X
DSEL
NOP - Enter precharge after tDPL
L
H
H
H
X
NOP
NOP - Enter precharge after tDPL
L
H
H
L
X
BST
ILLEGAL
4
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
4,8,10
L
H
L
L
BA, CA, AP
WRITE/WRITEAP
ILLEGAL
4,10
L
L
H
H
BA, RA
ACT
ILLEGAL
4,10
L
L
H
L
BA, AP
PRE/PALL
ILLEGAL
4,11
L
L
L
H
X
AREF/SREF
ILLEGAL
11
L
L
L
L
OPCODE
MRS
ILLEGAL
11
REFRESHING
H
X
X
X
X
DSEL
NOP - Enter IDLE after tRC
L
H
H
H
X
NOP
NOP - Enter IDLE after tRC
L
H
H
L
X
BST
ILLEGAL
11
L
H
L
H
BA, CA, AP
READ/READAP
ILLEGAL
11
相關(guān)PDF資料
PDF描述
HY5DU12822ALT-X 512Mb DDR SDRAM
HY5DU12822AT-X 512Mb DDR SDRAM
HY5DU121622CTP 512Mb(32Mx16) GDDR SDRAM
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HY5DU121622CTP-5 512Mb(32Mx16) GDDR SDRAM
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參數(shù)描述
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HY5DU12822B 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:512Mb DDR SDRAM